PROCEEDINGS VOLUME 5941
OPTICS AND PHOTONICS 2005 | 31 JULY - 4 AUGUST 2005
Fifth International Conference on Solid State Lighting
OPTICS AND PHOTONICS 2005
31 July - 4 August 2005
San Diego, California, United States
Solid State Lighting Plenary Presentation: Joint Session with Conference 5937
Proc. SPIE 5941, LEDs for solid state lighting and other emerging applications: status, trends, and challenges, 594101 (2 September 2005); doi: 10.1117/12.625918
Solid State Lighting: Joint Session with Conference 5937
Proc. SPIE 5941, Recent development of patterned structure light-emitting diodes, 594102 (2 September 2005); doi: 10.1117/12.625922
Overview
Proc. SPIE 5941, Bichromatic to polychromatic photo-conversion LEDs, 594104 (14 September 2005); doi: 10.1117/12.626309
Proc. SPIE 5941, Realizing LED illumination lighting applications, 594105 (2 September 2005); doi: 10.1117/12.623393
Proc. SPIE 5941, Deep green emission at 570nm from InGaN/GaN MQW active region grown on bulk AlN substrate, 594107 (15 September 2005); doi: 10.1117/12.617829
Systems and Applications I
Proc. SPIE 5941, Improved performance white LED, 594108 (14 September 2005); doi: 10.1117/12.625921
Proc. SPIE 5941, Multi-chip color variable LED spot modules, 59410A (2 September 2005); doi: 10.1117/12.623010
Proc. SPIE 5941, Achieving color point stability in RGB multi-chip LED modules using various color control loops, 59410C (2 September 2005); doi: 10.1117/12.623020
Developments in ZnO
Proc. SPIE 5941, ZnO semiconductors for lighting, 59410D (2 September 2005); doi: 10.1117/12.624534
Proc. SPIE 5941, Study on p-type ZnO: a potential new source of solid state lighting, 59410E (14 September 2005); doi: 10.1117/12.617854
Sources I
Proc. SPIE 5941, Linearly polarized spontaneous emission from m-plane InGaN/GaN multiple-quantum-well LEDs, 59410J (14 September 2005); doi: 10.1117/12.627959
Proc. SPIE 5941, Enhancement of light extraction in GaN light-emitting diodes by omni-directional reflectors with ITO nanorod low-refractive-index layer, 59410K (2 September 2005); doi: 10.1117/12.621871
Proc. SPIE 5941, Improved light extraction efficiency in III-nitride photonic crystal light-emitting diodes, 59410M (2 September 2005); doi: 10.1117/12.623511
Systems and Applications II
Proc. SPIE 5941, Solid state lighting for the developing world: the only solution, 59410N (14 September 2005); doi: 10.1117/12.639718
Proc. SPIE 5941, Linear lighting systems for shelf and cove lighting, 59410P (13 September 2005); doi: 10.1117/12.619153
Proc. SPIE 5941, An investigation on the light uniformers based on liquid guide, 59410R (14 September 2005); doi: 10.1117/12.613066
Sources II
Proc. SPIE 5941, Important interaction effects in the growth of InGaN violet light emitting diodes by MOCVD, 59410W (14 September 2005); doi: 10.1117/12.617658
Proc. SPIE 5941, Breakthroughs in laser bar component packaging enable a new generation of applications for self-cooled laser diode arrays, 59410X (14 September 2005); doi: 10.1117/12.618387
Proc. SPIE 5941, Electro-ridge for large injection current of micro-size InGaN light emitting diode, 59410Y (14 September 2005); doi: 10.1117/12.613306
Phosphors
Proc. SPIE 5941, Nitridosilicates: a new family of phosphors for color conversion of LEDs, 59410Z (14 September 2005); doi: 10.1117/12.623372
Proc. SPIE 5941, A novel green phosphor for three band white LEDs, 594110 (14 September 2005); doi: 10.1117/12.614299
Proc. SPIE 5941, YAG glass-ceramic phosphor for white LED (I): background and development, 594111 (14 September 2005); doi: 10.1117/12.614668
Proc. SPIE 5941, YAG glass-ceramic phosphor for white LED (II): luminescence characteristics, 594112 (14 September 2005); doi: 10.1117/12.614681
Packaging
Proc. SPIE 5941, The heat dissipation performance of LED applied a MHP, 594113 (14 September 2005); doi: 10.1117/12.616355
Proc. SPIE 5941, Novel silicone materials for LED packaging, 594115 (14 September 2005); doi: 10.1117/12.617250
Proc. SPIE 5941, Stress analysis of transferred thin-GaN LED by Au-Si wafer bonding, 594116 (15 September 2005); doi: 10.1117/12.615677
Proc. SPIE 5941, Thermal design considerations in the packaging of GaN based light emitting diodes, 594118 (14 September 2005); doi: 10.1117/12.625956
Systems and Applications III
Proc. SPIE 5941, LED downlights with non-circular spots, 594119 (14 September 2005); doi: 10.1117/12.619154
Proc. SPIE 5941, Application of solid state lighting in aerial refueling operations, 59411A (14 September 2005); doi: 10.1117/12.617532
Proc. SPIE 5941, Fuselage mounted anti-collision lights utilizing high power LEDs, 59411B (14 September 2005); doi: 10.1117/12.617565
Materials Development
Proc. SPIE 5941, Development of low dislocation and strain reduced GaN on Si(111) by substrate engineering, 59411E (14 September 2005); doi: 10.1117/12.617704
Proc. SPIE 5941, Red luminescence from Si quantum dots embedded in SiOx films grown with controlled stoichiometry, 59411F (14 September 2005); doi: 10.1117/12.624969
Characterization and Measurement
Proc. SPIE 5941, Toward an improved color rendering metric, 59411G (14 September 2005); doi: 10.1117/12.615388
Proc. SPIE 5941, Impact of dimming white LEDs: chromaticity shifts due to different dimming methods, 59411H (14 September 2005); doi: 10.1117/12.625924
Proc. SPIE 5941, Spectral matching with an LED-based spectrally tunable light source, 59411I (14 September 2005); doi: 10.1117/12.614952
Proc. SPIE 5941, Chromatic property measurement system for LED, 59411J (14 September 2005); doi: 10.1117/12.613663
Proc. SPIE 5941, Remote temperature mapping of high-power InGaN/GaN MQW flip-chip design LEDs, 59411K (14 September 2005); doi: 10.1117/12.618297
Sources III
Proc. SPIE 5941, Light recycling in solid state devices, 59411L (14 September 2005); doi: 10.1117/12.616499
Proc. SPIE 5941, High thermal stable and low resistance contacts to p-GaN for thin-GaN LED, 59411M (14 September 2005); doi: 10.1117/12.616349
Proc. SPIE 5941, The transient response of poly-crystal and amorphous solar cell panels: some experimental investigations, 59411N (14 September 2005); doi: 10.1117/12.620536
Proc. SPIE 5941, Consideration of development field versus photoconductor layer’s thickness, 59411O (14 September 2005); doi: 10.1117/12.615854
Poster/Demo Session
Proc. SPIE 5941, Fabrication of <i>p-n</i> junctions in as-grown ZnMgO/ZnO films, 59411P (14 September 2005); doi: 10.1117/12.616668
Proc. SPIE 5941, Color uniformity of the light distribution from several cluster configurations of multicolor LEDs, 59411S (14 September 2005); doi: 10.1117/12.618215
Proc. SPIE 5941, Properties of phosphorus-doped ZnO and (Zn,Mg)O thin films via pulsed laser deposition, 59411T (14 September 2005); doi: 10.1117/12.615015
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