This PDF file contains the front matter associated with SPIE Proceedings Volume 9213, including the Title Page, Copyright information, Table of Contents, Introduction, and Conference Committee listing.

Breakthrough energy resolution, R(662keV) < 4%, has been achieved with an oxide scintillator, Cerium-doped Gadolinium Yttrium Gallium Aluminum Garnet, or GYGAG(Ce). Transparent ceramic GYGAG(Ce), has a peak emission wavelength of 550 nm that is better matched to Silicon photodetectors than to standard PMTs. We are therefore developing a spectrometer based on pixelated GYGAG(Ce) on a Silicon photodiode array that can provide R(662 keV) = 3.6%. In comparison, with large 1-2 in³ size GYGAG(Ce) ceramics we obtain R(662 keV) = 4.6% with PMT readout. We find that ceramic GYGAG(Ce) of a given stoichiometric chemical composition can exhibit very different scintillation properties, depending on sintering conditions and post-anneal treatments. Among the characteristics of transparent ceramic garnet scintillators that can be controlled by fabrication conditions are: scintillation decay components and their amplitudes, intensity and duration of afterglow, thermoluminescence glow curve peak positions and amplitudes, integrated light yield, light yield non-proportionality - as measured in the Scintillator Light Yield Non-Proportionality Characterization Instrument (SLYNCI), and energy resolution for gamma spectroscopy. Garnet samples exhibiting a significant fraction of Cerium dopant in the tetravalent valence also exhibit: faster overall scintillation decay, very low afterglow, high light yield, but poor light yield proportionality and degraded energy resolution.

The detection of ionizing radiation is important in numerous applications related to national security ranging from the detection and identification of fissile materials to the imaging of cargo containers. A key performance criterion is the ability to reliably identify the specific gamma-ray signatures of radioactive elements, and energy resolution approaching 2% at 662 keV is required for this task. In this work, we present discovery and development of new high energy resolution scintillators for gamma-ray detection. The new ternary halide scintillators belong to the following compositional families: AM₂X₅:Eu, AMX3, and A₂MX₄:Eu (A = Cs, K; M = Ca, Sr, Ba; X = Br, I) as well as mixed elpasolites Cs₂NaREBr₃I₃:Ce (RE = La, Y). Using thermal analysis, we confirmed their congruent melting and determined crystallization and melting points. Using the Bridgman technique, we grew 6, 12 and 22 mm diameter single crystals and optimized the Eu concentration to obtain the best scintillation performance. Pulse-height spectra under gamma-ray excitation were recorded in order to measure scintillation light output, energy resolution and light output nonproportionality. The KSr₂I₅:Eu 4% showed the best combination of excellent crystal quality obtained at fast pulling rates and high light output of ~95,000 photons/MeV with energy resolution of 2.4% at 662 keV.

In this paper we report on plastic scintillators that contain organometallic iridium compounds as triplet harvesting complexes for neutron-gamma pulse shape discrimination (PSD). Our results show that these plastic scintillators have a relatively high light output (higher than BGO) and exhibit very good neutron-gamma PSD with a Figure-of-Merit of ≥ 2.0 at 2.5 MeVee cut-off energy. Under X-ray excitation, the radioluminescence spectrum exhibits a broad band between 400 and 650 nm peaking at 470 nm which is well-matched to bialkali photomultiplier tubes and UV-enhanced photodiodes. The scintillation decay due to Ir³⁺ luminescence is of the order of 1 us.

Cadmium Zinc Telluride and Cadmium Telluride are the detector materials of choice for the detection of X-rays in the X-ray energy band E ≥ 5 keV with excellent spatial and spectral resolution and without cryogenic cooling. Owing to recent breakthroughs in grazing incidence mirror technology, next-generation hard X-ray telescopes will achieve angular resolution between 5 and 10 arc seconds - about an order of magnitude better than that of the NuSTAR hard X-ray telescope. As a consequence, the next generation of X-ray telescopes will require pixelated X-ray detectors with pixels on a grid with a lattice constant of ≤ 250 μm. Additional detector requirements include a low energy threshold of less than 5 keV and an energy resolution of less than one keV. The science drivers for a high angular-resolution X-ray mission include studies and measurements of black hole spins, the cosmic evolution of super-massive black holes, active galactic nuclei feedback, and the behaviour of matter at very high densities. In this contribution, we report on our RandD studies with the goal to optimise small-pixel Cadmium Zinc Telluride and Cadmium Telluride detectors.

Chalcopyrite crystals of ⁶LiInSe₂ have recently been shown to respond to gamma and thermal neutron radiation. Thus far, large crystals have been prepared although the charge collection efficiency has not been sufficient for high energy resolution. In an effort to improve energy resolution needed for gamma spectroscopy as well as pulse shape discrimination for mixed gamma neutron fluxes, the precipitate concentration within the ⁶LiInSe₂ crystal have been studied. The precipitate volume greatly affects the energy resolution in the pulse height spectrum. Further, the charge mobility varies greatly with holes being preferentially trapped by these precipitates or some other defect site within the crystal.

This paper reports on recent attempts to develop and test a new type of solid-state neutron detector fabricated from uranium compounds. It has been known for many years that uranium oxide (UO₂), triuranium octoxide (U₃O₈) and other uranium compounds exhibit semiconducting characteristics with a broad range of electrical properties. We seek to exploit these characteristics to make a direct-conversion semiconductor neutron detector. In such a device a neutron interacts with a uranium nucleus, inducing fission. The fission products deposit energy-producing, detectable electron-hole pairs. The high energy released in the fission reaction indicates that noise discrimination in such a device has the potential to be excellent. Schottky devices were fabricated using a chemical deposition coating technique to deposit UO₂ layers a few microns thick on a sapphire substrate. Schottky devices have also been made using a single crystal from UO₂ samples approximately 500 microns thick. Neutron sensitivity simulations have been performed using GEANT4. Neutron sensitivity for the Schottky devices was tested experimentally using a ²⁵²Cf source.

The development of a thermal neutron imaging sensor constructed with semiconducting lithium indium diselenide is presented. Both a computational and experimental investigation were conducted. In the computational investigation, it is shown that the imaging potential of Lithium Indium Diselenid (LISe) is excellent, even when using a large pixel pitch through the use of super sampling. In the experimental investigation, it was found that a single pixel LISe detector using detector super sampling shows a spatial variation in the count rate, which is a clear sign of imaging capability. However, a good image was not obtained in the first experiment and may be caused by a variety of experimental conditions. Finally, a search is still underway to find a suitable contact metal with good mechanical adhesion for wedge bonding.

CdTe_xSe_1-x, with its several advantages over the conventional CdZnTe (CZT) material, offers potential as a roomtemperature radiation detector. Its main advantage is the near-unity segregation coefficient of Se in the CdTe matrix that results in higher compositional homogeneity of the grown ingot. In this paper, we discussed the growth of CdTeSe crystals by various techniques, such as the Traveling Heater method and the Vertical Bridgman technique. We analyzed the different defects in the grown ingots, including Te inclusions/precipitations, sub-grain boundaries and dislocation networks, and studied their effects on the materials’ charge-transport characteristics. Our experimental findings demonstrated several advantages of CdTeSe over CZT, in addition to the near-unity segregation coefficient of Se, including lower concentrations of Te-inclusions/precipitations and sub-grain boundaries and a higher degree of uniformity. Our findings on its charge-transport characteristics also are very encouraging.

In this work we present the results of experimental study of the current-voltage characteristics, the electric field distribution and the charge collection efficiency in X-ray sensors based on high resistivity, chromium compensated gallium arsenide (HR GaAs). The experimental samples were 0.1-0.25 cm² pad sensors with the sensitive layer thickness in the range of 250-1000 μm. It has been shown that the current-voltage characteristics in the range 0.02 – 1 V are determined by the high-resistance sensor bulk. A physical model of the nonequilibrium charge carrier transport has been suggested to estimate the Schottky barrier height in the contact of “metal-semiconductor” and the sensor material resistivity. It has been established that the sensor resistivity reaches 1.5 GOhm⋅cm at room temperature, with the Schottky barrier height constituting 0.80 – 0.82 eV. The electric field distribution was investigated using the Pockels effect at a wavelength of 920 nm. It has been found experimentally that in HR GaAs sensors the electric field distribution is much more homogeneous compared to the sensors based on SI GaAs: EL2. It has been shown that the temporal fluctuations of the electric field are absent in HR GaAs sensors. Analysis of the charge collection efficiency as a function of bias has demonstrated, that in the HR GaAs material the values of the mobility-lifetime product of the nonequilibrium charge carriers are in the order of 10^-4 cm2/V and 3⋅10^-7 cm2/V for electrons and holes, respectively.

We have investigated scintillator efficiency for MeV radiographic imaging. This paper discusses the modeled detection efficiency and measured brightness of a number of scintillator materials. An optical imaging camera records images of scintillator emission excited by a pulsed x-ray machine. The efficiency of various thicknesses of monolithic LYSO:Ce (cerium-doped lutetium yttrium orthosilicate) are being studied to understand brightness and resolution trade-offs compared with a range of micro-columnar CsI:Tl (thallium-doped cesium iodide) scintillator screens. The micro-columnar scintillator structure apparently provides an optical gain mechanism that results in brighter signals from thinner samples. The trade-offs for brightness versus resolution in monolithic scintillators is straightforward. For higher-energy x-rays, thicker materials generally produce brighter signal due to x-ray absorption and the optical emission properties of the material. However, as scintillator thickness is increased, detector blur begins to dominate imaging system resolution due to the volume image generated in the scintillator thickness and the depth of field of the imaging system. We employ a telecentric optical relay lens to image the scintillator onto a recording CCD camera. The telecentric lens helps provide sharp focus through thicker-volume emitting scintillators. Stray light from scintillator emission can also affect the image scene contrast. We have applied an optical light scatter model to the imaging system to minimize scatter sources and maximize scene contrasts.

Alkaline-earth scintillators such as strontium iodide and other alkaline-earth halides activated with divalent europium represent some of the most efficient and highest energy resolution scintillators for use as gamma-ray detectors in a wide range of applications. These applications include the areas of nuclear nonproliferation, homeland security, the detection of undeclared nuclear material, nuclear physics and materials science, medical diagnostics, space physics, high energy physics, and radiation monitoring systems for first responders, police, and fire/rescue personnel. Recent advances in the growth of large single crystals of these scintillator materials hold the promise of higher crystal yields and significantly lower detector production costs. In the present work, we describe new processing protocols that, when combined with our molten salt filtration methods, have led to advances in achieving a significant reduction of cracking effects during the growth of single crystals of SrI₂:Eu²⁺. In particular, we have found that extended pumping on the molten crystalgrowth charge under vacuum for time periods extending up to 48 hours is generally beneficial in compensating for variations in the alkaline-earth halide purity and stoichiometry of the materials as initially supplied by commercial sources. These melt-pumping and processing techniques are now being applied to the purification of CaI₂:Eu²⁺ and some mixed-anion europium-doped alkaline-earth halides prior to single-crystal growth by means of the vertical Bridgman technique. The results of initial studies of the effects of aliovalent doping of SrI₂:Eu²⁺ on the scintillation characteristics of this material are also described.

We present a numerical model of scintillator nonproportionality based on rate equations including carrier and exciton transport in assumed cylindrical electron tracks, solved by finite element method. Framed in volumetric excitation density n, these coupled rate equations describe hot and thermalized carrier transport, bimolecular exciton formation, carrier capture, and nonlinear quenching processes expressed in terms of physical rate constants and transport coefficients that have been measured and/or calculated independently of scintillation measurements in the example of CsI:Tl. The set of equations is solved in the spatial non-uniformities of an electron track and in times spanning the cooling of hot carriers up through thermalized transport and capture. The solution of the rate equations is combined with GEANT4 simulation of electron tracks to model electron energy response from the SLYNCI Compton-coincidence experiment.

The spatial and temporal scales of hot particle thermalization in inorganic scintillators are critical factors determining the extent of second- and third-order nonlinear quenching in regions with high densities of electron-hole pairs, which, in turn, leads to the light yield nonproportionality observed, to some degree, for all inorganic scintillators. Therefore, kinetic Monte Carlo simulations were performed to calculate the distances traveled by hot electrons and holes as well as the time required for the particles to reach thermal energy following γ-ray irradiation. CsI, a common scintillator from the alkali halide class of materials, was used as a model system. Two models of quasi-particle dispersion were evaluated, namely, the effective mass approximation model and a model that relied on the group velocities of electrons and holes determined from band structure calculations. Both models predicted rapid electron-hole pair recombination over short distances (a few nanometers) as well as a significant extent of charge separation between electrons and holes that did not recombine and reached thermal energy. However, the effective mass approximation model predicted much longer electron thermalization distances and times than the group velocity model. Comparison with limited experimental data suggested that the group velocity model provided more accurate predictions. Nonetheless, both models indicated that hole thermalization is faster than electron thermalization and thus is likely to be an important factor determining the extent of third-order nonlinear quenching in high-density regions. The merits of different models of quasi-particle dispersion are also discussed.

The application of advanced theory and modeling techniques has become an essential component to understand material properties and hasten the design and discovery of new ones. This is true for diverse applications. Therefore, current efforts aimed towards finding new scintillator materials are also aligned with this general predictive approach. The need for large scale deployment of efficient radiation detectors requires discovery and development of high-performance, yet low-cost, scintillators. While Tl-doped NaI and CsI are still some of the widely used scintillators, there are promising new developments, for example, Eu-doped SrI2 and Ce-doped LaBr3. The newer candidates have excellent light yield and good energy resolution, but challenges persist in the growth of large single crystals. We will discuss a theoretical basis for anticipating improved proportionality as well as light yield in solid solutions of certain systems, particularly alkali iodides, based on considerations of hot-electron group velocity and thermalization. Solid solutions based on NaI and similar alkali halides are attractive to consider in more detail because the end point compositions are inexpensive and easy to grow. If some of this quality can be preserved while reaping improved light yield and possibly improved proportionality of the mixture, the goal of better performance at the low price of NaI:Tl might be attainable by such a route. Within this context, we will discuss a density functional theory (DFT) based study of two prototype systems: mixed anion NaIxBr1-x and mixed cation NaxK1-xI. Results obtained from these two prototype candidates will lead to further targeted theoretical and experimental search and discovery of new scintillator hosts.

Development of the Europium-doped Strontium Iodide scintillator, SrI2(Eu2+), has progressed significantly in recent years. SrI2(Eu2+) has excellent material properties for gamma ray spectroscopy: high light yield (<80,000 ph/MeV), excellent light yield proportionality, and high effective atomic number (Z = 49) for high photoelectric cross-section. High quality 1.5” and 2” diameter boules are now available due to rapid advances in SrI2(Eu) crystal growth. In these large SrI2(Eu) crystals, optical self-absorption by Eu²⁺ degrades the energy resolution as measured by analog electronics, but we mitigate this effect through on-the-fly correction of the scintillation pulses by digital readout electronics. Using this digital correction technique we have demonstrated energy resolution of 2.9% FWHM at 662 keV for a 4 in3 SrI₂(Eu) crystal, over 2.6 inches long. Based on this digital readout technology, we have developed a detector prototype with greatly improved radioisotope identification capability compared to Sodium Iodide, NaI(Tl). The higher resolution of SrI₂(Eu) yields a factor of 2 to 5 improvement in radioisotope identification (RIID) error rate compared to NaI(Tl).

Neutron detectors are used in a myriad of applications—from safeguarding special nuclear materials (SNM) to determining lattice spacing in soft materials. The transformational changes taking place in neutron detection and imaging techniques in the last few years are largely being driven by the global shortage of helium-3 (³He). This article reviews the status of neutron sensors used specifically for SNM detection in radiological emergency response. These neutron detectors must be highly efficient, be rugged, have fast electronics to measure neutron multiplicity, and be capable of measuring direction of the neutron sources and possibly image them with high spatial resolution. Neutron detection is an indirect physical process: neutrons react with nuclei in materials to initiate the release of one or more charged particles that produce electric signals that can be processed by the detection system. Therefore, neutron detection requires conversion materials as active elements of the detection system; these materials may include boron-10 (¹⁰B), lithium-6 (⁶Li), and gadollinium-157 (¹⁵⁷Gd), to name a few, but the number of materials available for neutron detection is limited. However, in recent years, pulse-shape-discriminating plastic scintillators, scintillators made of helium-4 (⁴He) under high pressure, pillar and trench semiconductor diodes, and exotic semiconductor neutron detectors made from uranium oxide and other materials have widely expanded the parameter space in neutron detection methodology. In this article we will pay special attention to semiconductor-based neutron sensors. Modern microfabricated nanotubes covered inside with neutron converter materials and with very high aspect ratios for better charge transport will be discussed.

A new dual energy detector for vehicle scanning is presented. The system is composed of a three-sided Compton backscatter imaging system utilizing flying-spot x-rays concurrent with a transmission detector using the same x-ray beam. This detector is under the vehicle and is thin enough to be driven over with a modest bump which does not impede vehicle trac. It uses sheet scintillator with wavelength-shifting fibers as light pipes. Results are presented on steel penetration, calibration procedures and issues, and dual energy performance. The system’s dose is low enough for scanning people, including passenger vehicles.

ePix100 is the first variant of a novel class of integrating pixel ASICs architectures optimized for the processing of signals in second generation LINAC Coherent Light Source (LCLS) X-Ray cameras. ePix100 is optimized for ultra-low noise application requiring high spatial resolution. ePix ASICs are based on a common platform composed of a random access analog matrix of pixel with global shutter, fast parallel column readout, and dedicated sigma-delta analog to digital converters per column. The ePix100 variant has 50μmx50μm pixels arranged in a 352x384 matrix, a resolution of 50e- r.m.s. and a signal range of 35fC (100 photons at 8keV). In its final version it will be able to sustain a frame rate of 1kHz. A first prototype has been fabricated and characterized and the measurement results are reported here.

Surface damages occur in Cadmium zinc telluride (CdZnTe) wafers for radiation detection devices during dicing and polishing. This often results in increased leakage current that limits the performance of the detector. An effective method of removing the surface damage and thus reducing the leakage current is through the use of chemical treatments. The effects discussed in this study include: chemical polishing with a mixture of hydrogen bromide solution followed by passivation with ammonium fluoride in a hydrogen peroxide solution. The effects on the current-voltage measurements and the spectral response were monitored over a 2-week period. X-ray photoelectron spectroscopy (XPS) was also obtained to observe the formation of chemical species on treated surfaces. The resistivity of the treated CdZnTe samples is on the order of 10¹⁰ ohm-cm. The current in the I-V measurements increased rapidly immediately following the chemical polishing and surface passivation, and decreased steadily afterwards. The spectral response showed that the 59.5-keV peak of Am-241 was stable in the same position over the test period.

The project Scin^TAX developed novel thin scintillating films for the application in high performance X-ray imaging and subsequent introduced new X-ray detectors to the market. To achieve this aim lutetium orthosilicate (LSO) scintillators doped with different activators were grown successfully by liquid phase epitaxy. The high density of LSO (7.4 g/cm3), the effective atomic number (65.2) and the high light yield make this scintillator highly applicable for indirect X-ray detection in which the ionizing radiation is converted into visible light and then registered by a digital detector. A modular indirect detection system has been developed to fully exploit the potential of this thin film scintillator for radiographic and tomographic imaging. The system is compatible for high-resolution imaging with moderate dose as well as adaptable to intense high-dose applications where radiation hard microimaging detectors are required. This proceedings article shall review the achieved performances and technical details on this high-resolution detector system which is now available. A selected example application demonstrates the great potential of the optimized detector system for hard X-ray microimaging, i.e. either to improve image contrast due to the availability of efficient thin crystal films or to reduce the dose to the sample.

TlBr radiation detector operation degrades with time at room temperature and is thought to be due to electromigration of Tl and Br vacancies within the crystal as well as the metal contacts migrating into the TlBr crystal itself due to electrochemical reactions at the metal/TlBr interface. X-ray photoemission spectroscopy (XPS) was used to investigate the metal contact surface/interfacial structure on TlBr devices. Device-grade TlBr was polished and subjected to a 32% HCl etch to remove surface damage prior to Mo or Pt contact deposition. High-resolution photoemission measurements on the Tl 4f, Br 3d, Cl 2p, Mo 3d and Pt 4f core lines were used to evaluate surface chemistry and non-equilibrium interfacial diffusion. Results indicate that anion substitution at the TlBr surface due to the HCl etch forms TlBr_1-xCl_x with consequent formation of a shallow heterojunction. In addition, a reduction of Tl¹⁺ to Tl⁰ is observed at the metal contacts after device operation in both air and N2 at ambient temperature. Understanding contact/device degradation versus operating environment is useful for improving radiation detector performance.

We have designed experiments utilizing for achieving desired bandgap resistivity, electron hole-pairs by solid solution materials. A low temperature synthesis, purification and growth to reduce stress and high yield for low defect density crystals of PbI2-PbSe system was developed for low cost large volume high efficiency detectors. This material system can be used for γ-ray detection. The material design is based on the heavy metal halide and selenide solid-solution system. This novel multicomponent crystal involves innovative approach for synthesis, purification and low temperature growth from the melt in modified three- zone Bridgman furnace. Crystals up to 15 mm diameter were grown and cm size slabs were fabricated for evaluation. Our approach for shaped crystal growth previously used for crystal is an exciting approach to increase the yield and further reduce the fabrication cost. Preliminary results show high resistivity and large crystal growth feasibility for crystals using parent components.

The surface leakage current of high-resolution 4H-SiC epitaxial layer Schottky barrier detectors has been improved significantly after surface passivations of 4H-SiC epitaxial layers. Thin (nanometer range) layers of silicon dioxide (SiO₂) and silicon nitride (Si₃N₄) were deposited on 4H-SiC epitaxial layers using plasma enhanced chemical vapor deposition (PECVD) on 20 m thick n-type 4H-SiC epitaxial layers followed by the fabrication of large area (~12 mm²) Schottky barrier radiation detectors. The fabricated detectors have been characterized through current-voltage (I-V), capacitance-voltage (C-V), and alpha pulse height spectroscopy measurements; the results were compared with that of detectors fabricated without surface passivations. Improved energy resolution of ~ 0.4% for 5486 keV alpha particles was observed after passivation, and it was found that the performance of these detectors were limited by the presence of macroscopic and microscopic crystal defects affecting the charge transport properties adversely. Capacitance mode deep level transient studies (DLTS) revealed the presence of a titanium impurity related shallow level defects (Ec-0.19 eV), and two deep level defects identified as Z_1/2 and Ci1 located at E_c-0.62 and ~ E_c-1.40 eV respectively.

The chemical element abundance on planetary surface is essential for planetary science. We have been developing an active X-ray spectrometer (AXS), which is an in-situ chemical element analyzer based on the X-ray florescence analysis for future planetary landing missions. The AXS consists of an X-ray detector and multiple X-ray sources. Although a pyroelectric X-ray generator is promising for the AXS as an X-ray source, the raise of emission X-ray intensity is necessary for short-time and precise determination of elemental composition. Also, in order to enhance the detection efficiency of light major elements such as Mg, Al, and Si, we have tested the low energy X-ray emission by changing the target material. In this study, the X-ray emission calculation at the target by Monte Carlo simulation and the X-ray emission experiments were carried out. More than 106 cps of the time-averaged X-ray emission rate was achieved in maximum using a LiTaO3 crystal with 4 mm thickness and Cu target with 10 um thickness. The performance of pyroelectric X-ray generator is presented in this paper.

A description of the xenon detector (XD) for gamma-ray line emission registration is presented. The detector provides high energy resolution and is able to operate under extreme environmental conditions (wide temperature range and unfavorable acoustic action). Resistance to acoustic noise as well as improvement in energy resolution has been achieved by means of real-time digital pulse processing. Another important XD feature is the ionization chamber’s thin wall with composite housing, which significantly decreases the mass of the device and expands its energy range, especially at low energies.

Integrated circuits (ICs) from several mobile phones were studied as possible emergency dosimeters using optically stimulated luminescence (OSL) and thermoluminescence (TL) techniques. Measurement protocols were developed for ICs that take into consideration the effect of sensitization of the samples with increasing dose as well as fading of the signals after sample exposure. It was found that the OSL technique has a higher sensitivity with ICs when compared to TL, while the TL signals were characterized by better stability with time after exposure. Values of minimum measurable doses were found to be in the range between a few tens of mGy and several tens of mGy for the tested samples. It was concluded that ICs from mobile phones could be used for emergency dose reconstruction.

Organizations that fail to use known near-miss data when making operational decisions may be inadvertently rewarding risky behavior. Over time such risk taking compounds as similar near-misses are repeatedly observed and the ability to recognize anomalies and document the events decreases (i.e., normalization of deviance [1,2,3]). History from the space shuttle program shows that only the occasional large failure increases attention to anomalies again. This paper discusses prescriptions for project managers based on several on-going activities at NASA Goddard Space Flight Center (GSFC) to improve the lesson learning process for space missions. We discuss how these efforts can contribute to reducing near-miss bias and the normalization of deviance. This research should help organizations design learning processes that draw lessons from near-misses.

A large-area X-ray CMOS image sensor (LXCIS) is widely used in mammography, non-destructive inspection, and animal CT. For LXCIS, in spite of weakness such as low spatial and energy resolution, a Indirect method using scintillator like CsI(Tl) or Gd2O2S is still well-used because of low cost and easy manufacture. A photo-diode for X-ray imaging has large area about 50 ~ 200 um as compared with vision image sensors. That is because X-ray has feature of straight and very small light emission of a scintillator. Moreover, notwithstanding several structure like columnar, the scintillator still emit a diffusible light. This diffusible light from scintillator can make spatial crosstalk in X-ray photodiode array because of a large incidence angle. Moreover, comparing with vision image sensors, X-ray sensor doesn’t have micro lens for gathering the photons to photo-diode. In this study, we simulated the affection of spatial crosstalk in X-ray sensor by comparing optical sensor. Additionally, the chip, which was fabricated in 0.18 um 1P5M process by Hynix in Korea, was tested to know the effect of spatial crosstalk by changing design parameters. From these works, we found out that spatial crosstalk is affected by pixel pitch, incident angle of photons, and micro lens on each pixels.

We investigated the spectroscopic properties of several Cd(Zn)Te detectors with a Schottky contact and simulated them via a computer code. The responses were determined of 0.5-mm-thick surface-barrier Ni/Cd(Zn)Te/Ni detectors to gamma-rays from reference sources of ²⁴¹Am, ¹³³Ba, ¹⁵²Eu, ¹³⁷Cs and ⁶⁰Co. The best measured energy-resolution at 661.67 keV (¹³⁷Cs) of these detectors under 800 V of displacement voltage was better than 1.5%. The detectors’ response functions, simulated with Geant4 toolkit, agreed satisfactorily with our experimental data.

The recent progresses in the development and characterization of doped silica fiber optics for dosimetry applications in the modern radiation therapy, and for high energy physics experiments, are presented and discussed. In particular, the main purpose was the production of scintillating fiber optics with an emission spectrum which can be easily and efficiently distinguished from that of other spurious luminescent signals originated in the fiber optic material as consequence of the exposition to ionizing radiations (e.g. Cerenkov light and intrinsic fluorescence phenomena). In addition to the previously investigated dopant (Ce), other rare earth elements (Eu and Yb) were considered for the scintillating fiber optic development. The study of the luminescent and dosimetric properties of these new systems was carried out by using X and gamma rays of different energies and field sizes.

We investigated the passage of dark currents through semi-insulating crystals of Cd(Zn)Te with weak n-type conductivity that are used widely as detectors of ionizing radiation. The crystals were grown from a tellurium solution melt at 800 ^оС by the zone-melting method, in which a polycrystalline rod in a quartz ampoule was moved through a zone heater at a rate of 2 mm per day. The synthesis of the rod was carried out at ~1150 ^оС. We determined the important electro-physical parameters of this semiconductor, using techniques based on a parallel study of the temperature dependence of current-voltage characteristics in both the ohmic and the space-charge-limited current regions. We established in these crystals the relationship between the energy levels and the concentrations of deep-level impurity states, responsible for dark conductivity and their usefulness as detectors.

We studied the influence of prolonged thermal treatment on the concentration and the acceptor energy level positions in p-CdTe samples. We found that heating them at 720 K entails a decrease in the concentration of electrically active centers, i.e., a "self-cleaning" of the adverse effects of some contaminants. In samples wherein the conductivity was determined by the concentration of acceptors of the A1 type (EV + 0.03-0.05) eV, after heating it becomes controlled by a deeper acceptor of the A2 type (EV + 0.13-0.14) eV, and both the charge-carrier’s mobility and the ratio μр80/μр300 increase. This effect reflects the fact that during thermal treatment, the A1 acceptors and the compensating donors are removed from their electrically active positions, most likely due to their diffusion and trapping within the inclusions in the CdTe bulk, where they have little or no influence on carrier scattering and trapping.

Mobile surveillance systems are used to find lost radioactive sources and possible nuclear threats in urban areas. The REWARD collaboration [1] aims to develop such a complete radiation monitoring system that can be installed in mobile or stationary setups across a wide area. The scenarios include nuclear terrorism threats, lost radioactive sources, radioactive contamination and nuclear accidents. This paper will show the performance capabilities of the REWARD system in different scnarios. The results include both Monte Carlo simulations as well as neutron and gamma-ray detection performances in terms of efficiency and nuclide identification. The outcomes of several radiation mapping survey with the entire REWARD system will also be presented.

The change in bulk resistivity of CdZnTe (CZT) crystals was measured during infrared (IR) light between 950 and 1000 nm. The crystals are grown using one of the state-of-the-art methods either the traveling heating method or the modified Bridgman method. The change resistivity was evaluated using the steady-state current with and without light. Additionally, the change in current with both IR sources were correlated to the influence of secondary phases (SP) in each crystal using IR transmission microscopy to determine whether the number and size of the impurities has a drastic effect based on the current-voltage (IV) characteristics. SP at various depths within CZT are connected to the existence of variable depth, IR-excitable traps that lie within the bandgap. The release of these traps will significantly affect the overall current in the system. However, the current increase may not match the overall energy of the light utilized are more dependent on the size and quantity for each energy range.

CdTe and Cd_0.9Zn_0.1Te (CZT) crystals have been studied extensively for various applications including x- and γ-ray imaging and high energy radiation detectors. The crystals were grown from zone refined ultra-pure precursor materials using a vertical Bridgman furnace. The growth process has been monitored, controlled, and optimized by a computer simulation and modeling program developed in our laboratory. The grown crystals were thoroughly characterized after cutting wafers from the ingots and processed by chemo-mechanical polishing (CMP). The infrared (IR) transmission images of the post-treated CdTe and CZT crystals showed average Te inclusion size of ~10 μm for CdTe and ~8 μm for CZT crystal. The etch pit density was ≤ 5×10⁴ cm^-2 for CdTe and ≤ 3×10⁴ cm^-2 for CZT. Various planar and Frisch collar detectors were fabricated and evaluated. From the current-voltage measurements, the electrical resistivity was estimated to be ~ 1.5×10¹⁰ Ω-cm for CdTe and 2-5×10¹¹ Ω-cm for CZT. The Hecht analysis of electron and hole mobility-lifetime products (μτ_e and μτ_h) showed μτ_e = 2×10^-3 cm²/V (μτ_h = 8×10^-5 cm2/V) and 3-6×10^-3 cm²/V (μτh = 4- 6×10-5 cm2/V) for CdTe and CZT, respectively. Detectors in single pixel, Frisch collar, and coplanar grid geometries were fabricated. Detectors in Frisch grid and guard-ring configuration were found to exhibit energy resolution of 1.4% and 2.6 %, respectively, for 662 keV gamma rays. Assessments of the detector performance have been carried out also using ²⁴¹Am (60 keV) showing energy resolution of 4.2% FWHM.

Recently, Cadmium Manganese Telluride (CMT) emerged as a promising material for roomtemperature X- and gamma-ray detectors. However, our studies revealed several material defects primarily related to growth processes that are impeding the production of large single crystals with high resistivity and high mobility-lifetime product. In this work, we characterized various defects in materials grown by the floating zone method, including twins, Te inclusions, and dislocations, using our unique facilities. We also fabricated detectors from selected CMT crystals and tested their performance. This paper discusses our detailed findings on the material’s properties and the performance of fabricated CMT detectors.

A large-area X-ray CMOS image sensor (LXCIS) is widely used in mammography, non-destructive inspection, and animal CT. For LXCIS, in spite of weakness such as low spatial and energy resolution, a Indirect method using scintillator like CsI(Tl) or Gd2O2S is still well-used because of low cost and easy manufacture. A photo-diode for X-ray imaging has large area about 50 ~ 200 um as compared with vision image sensors. That is because X-ray has feature of straight and very small light emission of a scintillator. Moreover, notwithstanding several structure like columnar, the scintillator still emit a diffusible light. This diffusible light from scintillator can make spatial crosstalk in X-ray photodiode array because of a large incidence angle. Moreover, comparing with vision image sensors, X-ray sensor doesn’t have micro lens for gathering the photons to photo-diode. In this study, we simulated the affection of spatial crosstalk in X-ray sensor by comparing optical sensor. Additionally, the chip, which was fabricated in 0.18 um 1P5M process by Hynix in Korea, was tested to know the effect of spatial crosstalk by changing design parameters. From these works, we found out that spatial crosstalk is affected by pixel pitch, incident angle of photons, and micro lens on each pixels.