Sustainable practices, no matter the context, demand a quantitative assessment of environmental impacts. To provide that information, imec has developed a cradle-to-gate life cycle analysis of logic technology nodes based on bottom-up modeling of a generic high-volume semiconductor fabrication fab. Tool data, process recipes, and integrated wafer process flows are extracted from imec’s fab and partner data. The resultant virtual fab is used to identify major process contributors to emissions, to provide sensitivity analysis, and to enable future patterning decisions with a quantification of their environmental ramifications. Overall technology data will be shown, but as a more targeted example, the introduction of low and high NA EUV lithography will be studied. Key patterning parameters like mask design choices, wafer dose and patterning approaches are varied to quantify sensitivity to these choices. In the end, sustainability is driven by understanding the impact of these decisions throughout the supply chain. You will learn among other things, whether high NA is a sustainable choice or not.

Computing requirements are driven by ever increasing needs for higher performance, lower power consumption, and smaller form factors. These trends are broadly followed in most market segments, from high-performance cloud computing and defense applications to personal computing, handheld devices, and industrial automation. Advanced packaging is critical in the relentless pursuit of Moore’s law as more and more transistors are packed into smaller, more reliable, and higher performance units. The presentation will cover the solutions that balance performance, manufacturing, and market drivers.

Semiconductor process development represents a tremendous opportunity for AI-based approaches which excel in automating routine tasks and recognizing patterns in data. With the right toolset, process engineers can leverage AI models in their day-to-day development. Nevertheless, several key technical challenges must be tackled to successfully implement AI in a semiconductor fabrication environment. For example, model requirements and desired learnings are vastly different when considering the needs of process engineers performing R&D, technology ramp, or high-volume manufacturing. Moreover, preservation of data security remains a pressing issue. Most AI models rely on large sets of data which cannot be shared between manufacturers. In this talk, we will review SandBox’s key innovations in these areas. We will cover critical applications for patterning, etch, and deposition unit process optimization and new opportunities for process co-optimization.

Over the past decade, multiple electron beam photomask writers (MBWs) have been developed and reduced to manufacturing practice. The initial use was at the leading edge (especially for EUV masks), where complex features with low line edge roughness demand flexible patterning and high dose resists. MBWs’ utility can extend beyond leading edge masks, however, from more relaxed design rules to novel applications. This talk will survey the mask writer market from both historical and predictive perspectives. The technological and commercial factors will be tied to what, how, how many, and where mask writers are deployed. The main thesis of the talk is that MBWs’ unique attributes can redefine the electron beam mask writer market and allow them to play principal role in a wide range of applications.

Multibeam mask writers(MBMW) have been rapidly occupying on the field of leading edge EUV mask patterning for last several years. Thanks to outstanding ability of MBMW characteristics, sophisticated mask patterns and higher local pattern fidelity with low sensitivity E-beam resist can be realized in EUV era. Now most mask makers want to make good use of MBMW as a standard of making high-end grade masks such as Memory, Logic chips and etc. For this reason, they require higher pattern accuracy, faster writing time, higher data handling efficiency and matured machine stability aiming for the innovative mask making environment. Moreover, Larger coverage is needed as well not only for Low/High-NA EUV masks but also for even ARF masks. In this paper, we touch key items with regard to comprehensive requirements from the mass production's point of view, for the versatile machines, several works and challenges to overcome on MBMW will be discussed.

Since the introduction of the MBMW-101 generation in 2016, IMS Nanofabrication’s multi-beam mask writers have been established as the leading tools for the most advanced mask nodes. Over the years, IMS multi-beam technology has been improved continuously and the latest MBMW-201+ and MBMW-261 writer generations have proven their capability to pattern most complex curvilinear structures for advanced EUV masks at maximum throughput, especially on medium to low sensitivity resist. In 2023, IMS has taken another revolutionary step and released the MBMW-301, which is targeted at the 2nm-node and beyond to enable High-NA EUV mask production. This presentation will showcase most recent performance data and highlight how the introduction of the MBMW-301 generation is paving the way towards entering the angstrom era.

We will review the evolving merchant motivations for multi-node MBMW deployment including usage landscape and market dynamics. Requirements are broadened to include flexibility, process of record matching, cost, yield, multi-node cycle time, process extension and multi-product R&D pathfinding. Specific attention is paid to model based methods and metrology techniques that assist in efficient adoption of the MBMW systems into already qualified single beam based flows while, at the same time, enable cost effective MBMW based new node development and initial production.

The use of Inverse Lithography (ILT) in semiconductor manufacturing has been driving the need for curvilinear (CL) mask shapes. Complex CL mask shapes lead to an explosion in the vertex density (vertices/um^2) and file size at the mask shop vs. Manhattan corrections. This talk will review mask SEM CD and AIMS measurements from EUV and DUV masks made with end-to-end CL corrections (OPC, MPC and other mask CD corrections) at Intel mask operations (IMO). A path for significant file size reduction with the new MULTIGON record extension to the P39 OASIS file format will be reviewed. MULTIGON insertion involves significant changes in the mask making ecosystem that includes electronic tool design (EDA) tools, MBM writers and inspection tools. The talk will review the status of MULTIGON readiness and insertion at Intel.

Nanoimprint lithography (NIL) is a technology that can deliver cost effective fabrication of patterns from 10’s of microns, down to sub-micron and nano-patterns (<10 nm) on large areas. Currently two application areas are of great interest for NIL. Accurate wafer scale overlay alignment and the reproducibility in replicating patterns with less than 1nm variation on their absolute size. This is important for nanophotonic applications such as augmented reality and metalenses. . In this contribution, we will show advanced overlay data on 200 and 300 mm wafers. A novel high contrast alignment marker set was developed and used to automatically inspect up to 70.000 cross-in-box overlay markers on a 300 mm wafer. The markers are designed to have a high contrast which enables a robust automatic pattern recognition and a ~100 nm measurement accuracy.A 200mm wafer with metalenses and blazed grating metasurface, designed at 532nm wavelength, is used to validate the sensitivity of scatterometry on the imprint mask. These metalenses are produced by imprinting a silica NanoGlass etch mask and subsequent ICP/RIE transfer etch in a niobium-pentoxide layer of 800 nm thickness.

Nanoimprint lithography, NIL, has been developed for semiconductor lithography technology. In order to extend the field of NIL application, we have proposed templates for transferring three-dimensional shapes, such as dual damascene, and dense hole templates processed by LELE technique, which require high overlay accuracy of EB writing tools. In this presentation, we will discuss the performance of our template fabricated by using various multiple patterning technique. The layout of these templates includes both single layered fine features and multilayered structures, considering applications for random logic patterns and periphery of memory.

Advanced Packaging and its associated technology blocks (such as hybrid bonding, BackSide Power Delivery Networks, wafer reconstruction, die embedding etc) are becoming key enablers for extending Moore’s Law and scaling in general. Given that there are multiple application spaces utilising Advanced Packaging e.g. High Performance Computing, Chiplets, wafer level packaging etc the challenges facing Lithography cover the full range of illumination wavelength approaches plus Scan & Repeat, Direct Write and Imprint Lithography. Within this presentation we will discuss the Advanced Packaging landscape, putting into context various technology blocks such as through wafer high resolution patterning, Fine Pitch Redistribution Layer (FP-RDL) patterning, through die patterning of embedded die, Chiplet options and all with respect to resolution, overlay options plus some discussion on secondary issues such as die level defectivity and distortion. We conclude with a consolidated interconnect pitch roadmap clarifying basic interconnect options.

Quantum sensors are compact sensors that leverage quantum-matter/optical interactions to provide a measurement well-defined by fundamental physics, enabling self-calibrated measurements and offering an entirely independent detection paradigm. Atoms and molecules are excellent quantum objects for room-temperature transduction because they provide extensive scalability in energy and don't have the typical limitations introduced by standard microfabrication processes (variability, defects, yield, etc.). Until now, there has been no significant effort to leverage recent advances in packaging and photonics technology to assemble these unconventional 3DHI transducers in a scalable process that will propel this critical technology from benchtop to fieldable applications. In this presentation, I will describe the advantages of using Rydberg atoms for room-temperature quantum sensing, the novel consumer applications they would enable, and our progress in developing a quantum packaging technology compatible with semiconductor manufacturing techniques.

3-dimensional chiplet device architectures are expected to provide improved device performance, efficiency, and footprint beyond what is capable with 2-dimensional scaling technologies. Thick resist lithography of damascene and plating resists, as well as organic dielectric materials, plays a critical role in chiplet integration. However, thick resist lithography requires viscous resist solutions, specialized tooling, and long processing times. This makes patterning using these resists inherently prone to uniformity issues, which has become a crucial issue for scaling. This work highlights two strategic areas of thick resist patterning development: improved resist coating methods; and enhanced focus control during exposure. Herein, we show a track-based method for carefully controlled uniformity of the resist coating thickness, with some sacrifice of through-put. In addition, we show stepper-based focus methods to account for die level variations in resist and wafer thickness, as well as local topography. Combined, these provide precise cross-wafer control of thick resist dimensions.

Recent trends in heterogeneous integration and development in chiplet architectures are pushing the limits of 3D packaging. As 3D packaging evolves from microbumps to hybrid bonding at the die-to-die interface, the need for process control is becoming more imperative. This is driving the adoption of process control solutions that have been traditionally prevalent in the semiconductor front-end manufacturing fabs into high-end advanced packaging lines. Interconnect densities have now started to scale down to sub-micron levels. This requires processes to have extremely tight process control and tool precisions measured in nanometers, rather than microns. In this paper, we discuss various new process control solutions developed for advanced 3D packaging. Hybrid bonding requires several new processes that must be controlled with nanometer accuracy to achieve good yields. New inspection and metrology solutions are required to enable process control for these new processes. One of the key parameters in hybrid bonding is Cu dishing profile control. Cu dishing is achieved by the CMP process but requires sub-nm precision to measure the profile accurately. This can be achieved using Machi

Nanoimprint lithography (NIL) is considered to be a sustainable technology for fabricating fine patterns and 3D structure of semiconductor devices. In this paper, we report preliminary results of device qualification for dual damascene structure fabricated by NIL. We have optimized NIL conditions to improve defectivity and overlay accuracy, and etching condition to improve fidelity and uniformity of 3D shape on the entire wafer. The 1st electrical characteristic results confirm the possibilities of one step fabrication of 3D dual damascene structure using NIL

Multicolor approaches to resolution enhancement in visible-light lithography hold the promise to afford resolution on the scale of tens of nm for large-area nanofabrication at a cost that is attractive for medium- to small-volume manufacturing applications, as well as in the research laboratory. In this talk I will review the history of multicolor lithography and discuss some of the latest advances in materials and methods.

The field of 3D printing, particularly in micro- and nanoscale resolutions, has witnessed significant advancements in recent years. However, one persisting challenge is the limited throughput of techniques like 2-Photon-Polymerization (2PP), which often lags behind established direct laser writing systems in terms of volume written per unit of time. This contrast in throughput hinders the widespread adoption of 2PP, despite its unique capacity for three-dimensional fabrication with minimal feature sizes below 100 nm. To bridge this gap and unlock the full potential of 2PP, we propose a novel approach: the integration of standard lithography techniques with multiphoton lithography. In this presentation, we will present our results obtained through combined exposures.

The interference lithography is a promising technique for waveguide combiners and distributed feedback laser diodes. However, the technology has not been applied in mass production due to three issues. The first is an insufficient fringe pitch accuracy. The second is a deterioration of patterning quality due to low exposure contrast. And, last is time consuming alignment processes. We have developed an interference lithography system applied with technologies of a high precision wafer stage, a diode pumped solid-state laser with a wavelength of 266 nm and high accuracy actuators. The system has a patterning pitch accuracy of 0.01 nm, a patterning direction angle accuracy of 0.01 degree, an ability to form clear patterns with excellent exposure contrast and an automatical beam alignment for capability of mass production. We will present an overview of the system for achieving the specifications, and examples of processing.

A new set of tools and techniques are constantly developed and researched in order to assist metrology and lithography into the nano meter and atomic domain that involve nano scale devices and now, more than ever, quantum devices. Those techniques are built to serve a new generation of lithographic and metrology systems with the same goals of the system they came before them: insuring control, precision and confidence in the fabrication process. Our solution is the design and fabrication of a Multipurpose Atomic Force Microscopy (AFM) probe that integrates UV lithography, field emission lithography and digital lithography in a single system that allows patterning generation with atomic accuracy, real time inspection with atomic resolution and nano meter Raman Spectroscopy.The multifunction probe has shown strong durability, 365 nm laser emission with 1.5 nm FWHM, lithography patterning as low as 7 nm in field emission lithography configuration and 2 atom lithography in scanning tunneling mode.

The NanoFrazor employs thermal scanning probe lithography (tSPL) and direct laser sublimation to pattern and inspect nanoscale structures. This technology addresses complex nanodevice fabrication challenges by enabling markerless overlay, sub-nanometer precise 3D grayscale lithography, and integration into inert atmospheres for sensitive materials. Automation of NanoFrazor lithography is a natural progression, improving reliability, repeatability, and usability. Scripting and unprecedented patterning endurance allow for automated, markerless overlay of diverse features, benefiting applications requiring precise feature placement on pre-existing structures, like nanopillars on micro-posts or defined channels in FinFET devices. The upcoming multi-tip version of the NanoFrazor, the Decapede, enhances tSPL scalability without sacrificing resolution, enabling uninterrupted large-area patterning with parallelized tips and improved reproducibility. Use-cases demonstrate multi-tip patterning and the integration of 47 grating couplers onto silicon waveguides, creating unique nanophotonic devices. These advancements pave the way for scaled-up automated tSPL in More-than-Moore applications.

To enhance the accessibility of augmented reality (AR) eyewear and virtual reality (VR) headsets, it is crucial to offer a cost-effective and high-quality display solution. Liquid crystal (LC) technology has been extensively researched for this purpose, with Liquid-Crystal Polarization Holograms (LCPHs) standing out as a compact, lightweight solution with versatile optical capabilities essential for AR/VR systems. The fabrication of LCPHs utilizes polarization selectivity and self-assembly, enabling potential cost-effective streamlined production and advanced fabrication approaches. However, there are material requirements and technical challenges that need to be addressed together to achieve an immersive viewing experience with LCPHs. By exploring these opportunities and addressing the challenges, the integration of LCPHs holds the promise of revolutionizing AR/VR optics and providing an accessible, high-quality, and immersive viewing experience for various applications.

HighRI Optics reports the development of a polymer with a high refractive index (n = 1.80) and high optical transparency for direct patterning applications. The polymer can be ultraviolet curable and contains no metal oxide fillers. It is one of the polymers with the highest refractive index value available amongst commercial filler-free materials. This new polymer can be patterned via photolithography and electron beam lithography, becoming the first high refractive index polymer with capabilities as a negative tone resist. These properties allow fast and easy prototyping and manufacturing of high refractive index optical devices, including microlens arrays, photonic integrated circuits, etc.

In this presentation we share how the development of step-and-repeat DTL technology is addressing the growing need for periodic patterning in large-area device fabrication for display, AR/VR, and other photonic applications with low-cost, high-throughput (+40wph), high-resolution (UV, DUV) capabilities. Like projection lithography, non-contact, optical patterning is very repeatable and with a particle controlled mini-environment, robust to defectivity. Unlike projection, the DTL image is not limited to a small depth of focus (DOF). High resolution patterning is reliable over non-planar substrates and topography (300-400um), which is especially useful in applications where substrates are thick or so large that flatness is difficult to control. Other production–centric features include fully automated wafer and mask handling and high wafer throughput (+40wph). This technology shares the same material and process solutions that have been successfully used for semiconductor lithography for decades.

We present a comprehensive investigation into DSA materials and process development for P24 EUV lithography with the objective of mitigating DSA defects and enhancing the smoothness of DSA-defined patterns. We conduct a comparative assessment of the quality of DSA-rectified patterns between PS-b-PMMA and high Chi BCP. Furthermore, we explore resist planforms other than CAR for creating DSA guiding patterns.

This abstract delves into the evolution and impact of film deposition techniques within the optics and optoelectronics sector, particularly highlighting Spatial Atomic Layer Deposition (SALD) and ATLANT 3D's innovative microreactor Direct Atomic Layer Processing (µDALP™) technology. It discusses how SALD and µDALP™ overcome the limitations of traditional methods by providing precise control over film thickness and composition at an atomic level. Emphasizing µDALP™'s capability for accurate, localized thin film deposition, it explores its role in creating advanced optical components with enhanced performance. Additionally, the abstract touches upon the versatility of Atomic Layer Deposition (ALD) for various optical materials, underscoring the potential of µDALP™ in fabricating high-quality optical films for diverse applications, promising significant advancements in optical technology and industry applications.

Bottom-up nanofabrication with area-selective deposition provides a viable way to minimize edge placement error in semiconductor manufacturing. Here we developed a class of polymers, polypeptoids, as growth promoters that enhance nucleation and growth of metal oxides in vapor phase infiltration for area-selective deposition, generating aluminum oxide hard masks for pattern transfer with high selectivity. This material platform, with its capability to efficiently promote metal oxide growth and versatility in monomer-level chemical functionality control, will enable new area-selective deposition and pattern transfer methods.

Industries use extreme ultraviolet (EUV) light sources with a wavelength of 13.5 nm to achieve sub-10 nm patterning capabilities. However, the stochastic limitations arising from the patterning processes are still considered a challenge to high-precision pattern transfer. We explore a unique approach combining area-selective atomic layer deposition (AS-ALD) and vapor phase infiltration (VPI) to fabricate a hard mask layer with atomic precision. In AS-ALD, tuning the precursor provides a variable for achieving selectivity. We develop Al2O3 and HfO2 ALD processes with various precursors and perform AS-ALD over patterned polypeptoid (PP) and polystyrene (PS) brushes as growth and non-growth areas, respectively. Results show that ALD can occur within the PP brushes, while PS brushes can inhibit the adsorption of the precursor. We introduce the effect of ALD precursor selection to achieve high-precision pattern transfer based on the chemical reactivity between ALD precursor and EUV-patterned materials.

Vapor-phase infiltration (VPI), also known as sequential infiltration synthesis (SIS), utilizes sequential and cyclic infiltration of gaseous organometallic precursors and¬ co-reactants into the matrix of organic templates to form inorganic-infused organic-inorganic hybrids that feature uniquely modified material composition, properties, and structures. In this talk, I will highlight our recent efforts on employing VPI of metal oxides for novel patterning applications based on various polymeric templates, such as self-assembled block copolymers (BCPs) and photoresists. Precursor-polymer reaction chemistry will be overviewed in relation to infiltration fidelity, area selectivity, material distribution, and volume expansion, which can have impacts on target patterning applications, including BCP-based metal oxide nanostructure patterning and the vapor-phase synthesis of hybrid extreme ultraviolet (EUV) photoresists.

Thermophotovoltaics (TPV) represent a promising route for converting heat generated as a byproduct into usable electricity through a clean energy paradigm. However, the material options used to date for the optical emitters substantially constrain the power conversion efficiency of this process. Specifically, we focused our search to dual-layer emitters that could be achieved in thin-film or patterned forms. Thus, we screened the optical response (i.e. permittivity) of >2,800 material combinations with melting point >2,000 oC, The mismatch in permittivity allowed for emission control, key for the development of high performing TPV. We found a handful of emitters for TPV with theoretical efficiency >60% at 1800 oC, for GaSb solar cells. To complement our analysis, we also identified optimal material combinations for InGaAsSb, InGaAs, Ge, GaSb, and Si solar cells. The final down selection of materials is also based on their thermal expansion and thermochemical stability, which are frequently overlooked. We also quantify the response of B4C/AlN using in situ, high-temperature optical measurements.

One of the founding ideas of Notion Systems was to replace the current subtractive process chains with additive process steps in electronics manufacturing. The n.jet inkjet platform is used to produce electronic displays, printed circuit boards, semiconductor components, as well as high precision optical 3D parts, covering the full range of solutions from lab to fab. Main inkjet applications are coating, dispensing or patterning. Patterning can easily be done with inkjet printing, as it is a digital printing process with drop-on-demand functionalities. Depending on the print head and the material used, resolutions of 20μm are possible. Even though this is an interesting technology for any industries, there are limitations with this technology for certain display or semiconductor applications. For this reason, Notion Systems has invested in a collaboration with Scrona AG of Switzerland, which has developed an EHD printing technology for additive manufacturing of technical components at the submicron scale.

Development of advanced electronic and microfluidic devices requires innovative photoresist solutions to fabricate these increasingly complex devices. Novel requirements on the properties of traditional photoresists may include mechanical flexibility, stretchability, dielectric stability, low water permeability, and small molecule absorption. Here, we introduce a novel series of perfluoropolyether photoresists (SNER: Soft Negative Elastomeric Resist) that are compatible with i-line photolithography techniques. Depending on the chemical formulation, the elastic modulus of the cured resist can be controlled in the range of 1 to 100MPa. The film thickness range is 0.1 to 200μm, with a 2 to 5μm resolution, and good adhesion to sputtered metal. Soft biocompatible microelectrode arrays realized with SNER showed year-long dielectric stability in physiological solutions, comparable to that of SU-8 2000, and significantly lower ionic permeability than polydimethylsiloxane (PDMS).

Optical grayscale lithography offers the possibility to pattern 3D microstructures at large scale and high throughput for HVM semiconductor industry [1-4]. 3D structures uniformity is of importance to ensure homogeneous and at-best performances of several tens of millions of functional elements. This uniformity can be impacted in part by the optical mask variability. Impact of mask variability can be quantified in terms of Mask Error Enhancement Factor (MEEF) [5] for optical grayscale lithography which can be calculated by using resist contrast curve. It has been shown that MEEF is highly dependent on mask densities [5]. Once the mask is fabricated, the impact of mask variabilities on lithography can be controlled by process optimization. In this paper we evaluate the impact of process parameters on optical grayscale MEEF by theoretical and experimental means.

Three-color lithography (3CL) is a technique for fabricating high-resolution nanopatterns using visible light. This technique has been benchmarked in one promising photoresist by fabricating arrays of posts in a three-color material. The smallest posts are ~130nm in diameter, and the best pitches are around 180nm. If the 3CL deactivation step is not used, any features that are fabricated this close together merge due to proximity effects. The benefit of 3CL over other techniques, such as multi-patterning and extreme UV lithography, is that 3CL uses inexpensive optics and light sources, and the setup is simpler because high vacuum is not necessary.

Nanoimprint Lithography (NIL) remains a versatile technology for replicating optically functional patterns. However, height and roughness conservation over large areas during replication, remains a challenge. In order to identify UV-NIL process capabilities, this study propose to validate the replication of multi-height pillars present on the resist master manufactured by grayscale lithography. Multiple measurement were performed on all pillars before and after replication using profilometry and Atomic Force Microscopy (AFM) to evaluate height and roughness of all patterns. This achievement represents a novel approach to understanding and identifying the capabilities of the UV-NIL process.