Optimization of dual phase change material mask with sub-diffraction resolution for novel photolithography technology

Shinill Kang; Donghyun Kim; Ika Oktavia Suryani; Eunjoo Chae

doi:10.1117/12.2658357

30 April 2023 Optimization of dual phase change material mask with sub-diffraction resolution for novel photolithography technology

Shinill Kang, Donghyun Kim, Ika Oktavia Suryani, Eunjoo Chae

Author Affiliations +

Proceedings Volume PC12497, Novel Patterning Technologies 2023; PC124970M (2023) https://doi.org/10.1117/12.2658357
Event: SPIE Advanced Lithography + Patterning, 2023, San Jose, California, United States

Abstract

Nanoscale patterning using photolithography is becoming an active research area that focuses on patterning at small line widths to support high-density electrical device integration. Taking advantage of optical characterization of phase change material (PCM), we propose near-field nanolithography using a reusable Sb65Se35 dual PCM mask to produce sub-diffraction optical aperture. Numerical simulation on the PCM layer was performed to analyze the power absorption, temperature distribution, and corresponding optical aperture. Additionally, numerical simulation of Finite Difference Time Domain (FDTD) was used to analyze the photoresist pattern. To verify the method, photolithography using a dual layer PCM mask was conducted and a photoresist pattern with 39 nm FWHM was obtained. Free from photoresist composed of various points and lines also could be produced through the mask that overcome the diffraction limit.

Conference Presentation

Citation Download Citation

Shinill Kang, Donghyun Kim, Ika Oktavia Suryani, and Eunjoo Chae "Optimization of dual phase change material mask with sub-diffraction resolution for novel photolithography technology", Proc. SPIE PC12497, Novel Patterning Technologies 2023, PC124970M (30 April 2023); https://doi.org/10.1117/12.2658357

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