Infrared Solid State Imaging Arrays

Richard D. Nelson

doi:10.1117/12.955847

9 November 1977 Infrared Solid State Imaging Arrays

Richard D. Nelson

Proceedings Volume 0124, Modern Utilization of Infrared Technology III; (1977) https://doi.org/10.1117/12.955847
Event: 21st Annual Technical Symposium, 1977, San Diego, United States

Abstract

Possible system applications of Infrared Charge Transfer Devices are reviewed. It is found that this device technology can have a very significant systems impact. Analyses are performed to calculate the quantum efficiency, quantum yield, frequency response, photoconductive gain, operating temperature, noise and the distinction between parallel and transverse bias configurations of silicon detectors. Tables of silicon detector properties are included. Approaches to the interface circuitry which couples the detectors and the CTD multiplexer are examined. Examples of existing low background and high background IRCTD detector arrays are given.

Citation Download Citation

Richard D. Nelson "Infrared Solid State Imaging Arrays", Proc. SPIE 0124, Modern Utilization of Infrared Technology III, (9 November 1977); https://doi.org/10.1117/12.955847

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