Methods Of Determining Optical Constants Of Thin Semiconductor Films Using Normal Incidence Reflectance And Transmittance Data

D. R. McKenzie; R. C. McPhedran; N. Savvides; L. C. Botten; P. J. Martin; R. P. Netterfield

doi:10.1117/12.934355

16 June 1983 Methods Of Determining Optical Constants Of Thin Semiconductor Films Using Normal Incidence Reflectance And Transmittance Data

D. R. McKenzie, R. C. McPhedran, N. Savvides, L. C. Botten, P. J. Martin, R. P. Netterfield

Author Affiliations +

Proceedings Volume 0369, Max Born Centenary Conf; (1983) https://doi.org/10.1117/12.934355
Event: The Max Born Centenary Conference, 1982, Edinburgh, United Kingdom

Abstract

Techniques for determining the optical constants of thin absorbing films are described and applied to the evaluation of the optical constants of carbon and silicon semiconductor films prepared by magnetron sputtering and ion beam sputtering techniques. The results are discussed with emphasis on the nature and origin of the optical gaps.

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D. R. McKenzie, R. C. McPhedran, N. Savvides, L. C. Botten, P. J. Martin, and R. P. Netterfield "Methods Of Determining Optical Constants Of Thin Semiconductor Films Using Normal Incidence Reflectance And Transmittance Data", Proc. SPIE 0369, Max Born Centenary Conf, (16 June 1983); https://doi.org/10.1117/12.934355

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