Paper
31 May 1984 Infrared Properties Of Heavily Implanted Silicon, Germanium And Gallium Arsenide
William G Spitzer, Lihyeh Liou, Kou-Wei Wang, Charles N. Waddell, Graham Hubler, Sook-Il Kwun
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Abstract
A review of the techniques developed for using infrared reflection spectroscopy to study properties of heavily implanted semiconductors is presented. Several structural models are considered and calculations based on them are applied to measurements of implanted Si, Ge and GaAs. These comparisons of model calculations and measured spectra show how a number of important physical parameters can be obtained as well as new information concerning implantation-induced amorphous material.
© (1984) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
William G Spitzer, Lihyeh Liou, Kou-Wei Wang, Charles N. Waddell, Graham Hubler, and Sook-Il Kwun "Infrared Properties Of Heavily Implanted Silicon, Germanium And Gallium Arsenide", Proc. SPIE 0463, Advanced Semiconductor Processing/Characterization of Electronic/Optical Materials, (31 May 1984); https://doi.org/10.1117/12.941346
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KEYWORDS
Silicon

Infrared radiation

Annealing

Ions

Refractive index

Gallium arsenide

Germanium

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