16 February 2017 Processing and characterization of high resolution GaN/InGaN LED arrays at 10 micron pitch for micro display applications
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Proceedings Volume 10104, Gallium Nitride Materials and Devices XII; 1010422 (2017); doi: 10.1117/12.2252196
Event: SPIE OPTO, 2017, San Francisco, California, United States
Abstract
We report the fabrication process and characterization of high resolution 873 x 500 pixels emissive arrays based on blue or green GaN/InGaN light emitting diodes (LEDs) at a reduced pixel pitch of 10 μm. A self-aligned process along with a combination of damascene metallization steps is presented as the key to create a common cathode which is expected to provide good thermal dissipation and prevent voltage drops between center and side of the micro LED matrix. We will discuss the challenges of a self-aligned technology related to the choice of a good P contact metal and will present our solutions for the realization of the metallic interconnections between the GaN contacts and the higher levels of metallization at such a small pixel pitch. Enhanced control of each technological step allows scalability of the process up to 4 inch LED wafers and production of high quality LED arrays. The very high brightness (up to 107 cd.m-2) and good external quantum efficiency (EQE) of the resulting device make these kind of micro displays suitable for augmented reality or head up display applications.
Conference Presentation
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Ludovic Dupré, Marjorie Marra, Valentin Verney, Bernard Aventurier, Franck Henry, François Olivier, Sauveur Tirano, Anis Daami, François Templier, "Processing and characterization of high resolution GaN/InGaN LED arrays at 10 micron pitch for micro display applications", Proc. SPIE 10104, Gallium Nitride Materials and Devices XII, 1010422 (16 February 2017); doi: 10.1117/12.2252196; http://dx.doi.org/10.1117/12.2252196
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KEYWORDS
Light emitting diodes

Gallium nitride

Etching

Electro optics

Matrices

Photomasks

External quantum efficiency

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