Experiences With The Reactive Low Voltage Ion Plating In Optical Thin Film Production

K. Gurtler; U. Jeschkowski; E. Conrath

doi:10.1117/12.950036

27 February 1989 Experiences With The Reactive Low Voltage Ion Plating In Optical Thin Film Production

K. Gurtler, U. Jeschkowski, E. Conrath

Proceedings Volume 1019, Thin Film Technologies III; (1989) https://doi.org/10.1117/12.950036
Event: 1988 International Congress on Optical Science and Engineering, 1988, Hamburg, Germany

Abstract

The transmission of interference filters consisting of Ta205, Ti02, Zr02 and Si02 layers were measured at temperatures between 25°C and 185°C. Some characteristic differences between filters produced by reactive evaporation and reactive ion plating are demonstrated and discussed.

Citation Download Citation

K. Gurtler, U. Jeschkowski, and E. Conrath "Experiences With The Reactive Low Voltage Ion Plating In Optical Thin Film Production", Proc. SPIE 1019, Thin Film Technologies III, (27 February 1989); https://doi.org/10.1117/12.950036

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