Axial InGaAs/GaAs nanowire separate absorption-multiplication avalanche photodetectors (Conference Presentation)

Diana L. Huffaker; Alan C. Farrell; Xiao Meng

doi:10.1117/12.2265851

7 June 2017 Axial InGaAs/GaAs nanowire separate absorption-multiplication avalanche photodetectors (Conference Presentation)

Diana L. Huffaker, Alan C. Farrell, Xiao Meng

Author Affiliations +

Proceedings Volume 10193, Ultrafast Bandgap Photonics II; 101930D (2017) https://doi.org/10.1117/12.2265851
Event: SPIE Defense + Security, 2017, Anaheim, CA, United States

Abstract

In0.53Ga0.47As/InP single photon avalanche detectors (SPADs) have a high photon detection efficiency in the near-IR, however the dark count rate is prohibitively high at room temperature. A nanowire-based In0.3Ga0.7As/GaAs SPAD can significantly reduce the DCR through a nearly three order of magnitude reduction in bulk InGaAs volume, as well as by reducing the indium composition for operation at 1064 nm. As a first step, we have successfully grown axial InGaAs/GaAs heterostructures using catalyst-free selective-area epitaxy. We will present the electrical characterization of a vertically oriented nanowire array InGaAs/GaAs SPADs operating at 1064 nm and use 3-dimensional modeling to aid in the analysis.

Conference Presentation

View presentation recording on the SPIE Digital Library: http://dx.doi.org/10.1117/12.2265851.5459357357001

Citation Download Citation

Diana L. Huffaker, Alan C. Farrell, and Xiao Meng "Axial InGaAs/GaAs nanowire separate absorption-multiplication avalanche photodetectors (Conference Presentation)", Proc. SPIE 10193, Ultrafast Bandgap Photonics II, 101930D (7 June 2017); https://doi.org/10.1117/12.2265851

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KEYWORDS

Nanowires

Avalanche photodetectors

Epitaxy

Heterojunctions

Indium

Indium gallium arsenide

Photodetectors

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