Laser tunning silicon microdevices for analog microelectronics

M. Meunier

doi:10.1117/12.2283872

29 August 2017 Laser tunning silicon microdevices for analog microelectronics

M. Meunier

Proceedings Volume 10313, Opto-Canada: SPIE Regional Meeting on Optoelectronics, Photonics, and Imaging; 1031324 (2017) https://doi.org/10.1117/12.2283872
Event: Opto-Canada: SPIE Regional Meeting on Optoelectronics, Photonics, and Imaging, 2002, Ottawa, Ontario, Canada

Abstract

A novel laser tunning technique, fully compatible with conventional CMOS processes, is described for analog and mixed microelectronics applications. In this method, a laser beam is used to create a resistive device by melting a silicon area, thereby forming an electrical link between two adjacent p-n junction diodes. These laser diffusible resistances can be made in the range of 100S2 to a few MS2, with an accuracy of 5Oppm, by using an iterative process.

Citation Download Citation

M. Meunier "Laser tunning silicon microdevices for analog microelectronics", Proc. SPIE 10313, Opto-Canada: SPIE Regional Meeting on Optoelectronics, Photonics, and Imaging, 1031324 (29 August 2017); https://doi.org/10.1117/12.2283872

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