Paper
6 April 2017 Software for analysis of the process of formation of the catalytic mask in the off-electrode plasma
M. A. Markushin, V. A. Kolpakov, S. V. Krichevskiy
Author Affiliations +
Proceedings Volume 10342, Optical Technologies for Telecommunications 2016; 1034215 (2017) https://doi.org/10.1117/12.2270743
Event: XIV International Scientific and Technical Conference on Optical Technologies in Telecommunications, 2016, Samara, Russian Federation
Abstract
We investigated one of the technologies of forming microrelief of diffractive optical elements. The technology is based on using catalytic mask in off-electrode plasma. We have developed a software that allows to evaluate some important parameters of this technological process. First, it is the evaluation of numerical values of concentration profiles "vacancies" and semiconductor atoms in the melt. Second, it is the evaluation of time for irradiation the "metal - semiconductor" structure to achieve the desired depth and the doping concentration of the semiconductor atoms in the melt layer. This enabled to determine the best modes for generating a predetermined height of diffractive microrelief.
© (2017) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
M. A. Markushin, V. A. Kolpakov, and S. V. Krichevskiy "Software for analysis of the process of formation of the catalytic mask in the off-electrode plasma", Proc. SPIE 10342, Optical Technologies for Telecommunications 2016, 1034215 (6 April 2017); https://doi.org/10.1117/12.2270743
Advertisement
Advertisement
RIGHTS & PERMISSIONS
Get copyright permission  Get copyright permission on Copyright Marketplace
KEYWORDS
Semiconductors

Chemical species

Photomasks

Plasma

Software development

Doping

Silicon

RELATED CONTENT

Gate tie down construct in the 22FDX technology a...
Proceedings of SPIE (March 28 2017)
Deep discrete trenches filled by in situ doped polysilicon ...
Proceedings of SPIE (September 01 1999)
Molecular Beam Epitaxial Growth Of Silicon Devices
Proceedings of SPIE (September 15 1982)
Energy band diagrams of PtSi Si barrier with a heavily...
Proceedings of SPIE (March 27 2002)
Optical characterization of power devices
Proceedings of SPIE (September 18 1995)

Back to Top