Presentation + Paper
6 September 2017 Progress in the room temperature operation of GaAs-based lateral-type spin-PD in near-infrared wavelength region
R. C. Roca, N. Nishizawa, K. Nishibayashi, H. Munekata
Author Affiliations +
Abstract
A lateral-type spin-photodiode having a refracting facet on a side edge of the device is proposed and fabricated experimentally. The light impinged on the side of the device is refracted and shed directly on the backside of a spin-detecting Fe contact where spin-polarized carriers are generated in a thin InGaAs active layer and injected in the Fe contact through a crystalline AlOx tunnel barrier. Experiments are carried out at room temperature with photocurrent set up with circular polarization spectrometry, through which light-helicity-dependent photocurrent component, ΔI, is obtained with the spin detection efficiency F ≈ 0.4 %, where F is the ratio between ΔI and total photocurrent. This value is the highest reported so far for lateral-type spin-photodiodes. It is discussed that improving the quality of the p-InGaAs/x-AlOx/Fe interfaces will give rise to higher F values.
Conference Presentation
© (2017) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
R. C. Roca, N. Nishizawa, K. Nishibayashi, and H. Munekata "Progress in the room temperature operation of GaAs-based lateral-type spin-PD in near-infrared wavelength region", Proc. SPIE 10357, Spintronics X, 103571C (6 September 2017); https://doi.org/10.1117/12.2275577
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CITATIONS
Cited by 3 scholarly publications.
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KEYWORDS
Electrons

Semiconductors

Heterojunctions

Integrated optical circuits

Photonic devices

Polarization

Spintronics

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