Paper
24 October 2017 Imaging performance comparison of novel CMOS low-light-level image sensor and electron multiplying CCD sensor
Author Affiliations +
Proceedings Volume 10462, AOPC 2017: Optical Sensing and Imaging Technology and Applications; 104623X (2017) https://doi.org/10.1117/12.2285297
Event: Applied Optics and Photonics China (AOPC2017), 2017, Beijing, China
Abstract
Due to its advantages on the cost, power and size, the study of the CMOS image sensor is considered as an important direction of the development of low-light-level image sensor. However, the sensitivity of current CMOS image sensor does not satisfy the low-light-level application requirements. This paper introduces several key techniques on how to improve the sensitivity of CMOS image sensors. We introduce a novel CMOS low-light-level image sensor based on Geiger mode avalanche photodiode (GM-APD) and digital TDI technology. Noise characteristics and complete signal-tonoise ratio(SNR) theoretical models are constructed for both sensors. A comparison of SNR performance of two image sensors is also done by numerical simulation in this paper. The results show that the novel CMOS low-light-level image sensor outperforms EMCCD at the very low light level.
© (2017) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Song Yang, Xuxia Zhuang, Fang Xue, Qian Sun, and Ningjuan Ruan "Imaging performance comparison of novel CMOS low-light-level image sensor and electron multiplying CCD sensor", Proc. SPIE 10462, AOPC 2017: Optical Sensing and Imaging Technology and Applications, 104623X (24 October 2017); https://doi.org/10.1117/12.2285297
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Cited by 2 scholarly publications.
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KEYWORDS
CMOS sensors

Signal to noise ratio

Electron multiplying charge coupled devices

Image sensors

Photons

Charge-coupled devices

Interference (communication)

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