Tin-gallium-oxide-based UV-C detectors

Partha Mukhopadhyay; Mykyta Toporkov; Winston V. Schoenfeld

doi:10.1117/12.2302729

23 February 2018 Tin-gallium-oxide-based UV-C detectors

Partha Mukhopadhyay, Mykyta Toporkov, Winston V. Schoenfeld

Proceedings Volume 10533, Oxide-based Materials and Devices IX; 105330V (2018) https://doi.org/10.1117/12.2302729
Event: SPIE OPTO, 2018, San Francisco, California, United States

Abstract

The emergence of conductive gallium oxide single crystal substrates offers the potential for vertical Schottky detectors operating in the UV-C spectral region. We report here on our recent work in the development of Tin Gallium oxide (TGO) thin film metal-semiconductor-metal (MSM) and Schottky detectors using plasma-assisted molecular beam epitaxy on c plane sapphire and bulk Ga₂O₃ substrates. Tin alloying of gallium oxide thin films was found to systematically reduce the optical band gap of the compound, providing tunability in the UV-C spectral region. Tin concentration in the TGO epilayers was found to be highly dependent on growth conditions, and Ga flux in particular. First attempts to demonstrate vertical Schottky photodetectors using TGO epilayers on bulk n-type Ga₂O₃ substrates were successful. Resultant devices showed strong photoresponse to UV-C light with peak responsivities clearly red shifted in comparison to Ga₂O₃ homoepitaxial Schottky detectors due to TGO alloying.

Citation Download Citation

Partha Mukhopadhyay, Mykyta Toporkov, and Winston V. Schoenfeld "Tin-gallium-oxide-based UV-C detectors", Proc. SPIE 10533, Oxide-based Materials and Devices IX, 105330V (23 February 2018); https://doi.org/10.1117/12.2302729

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