Room-temperature photoluminescence spectrum from β-FeSi2 films

Kensuke Akiyama; Yoshihisa Matsumoto; Hiroshi Funakubo

doi:10.1117/12.2289984

14 February 2018 Room temperature photoluminescence spectrum from β-FeSi₂ films

Kensuke Akiyama, Yoshihisa Matsumoto, Hiroshi Funakubo

Proceedings Volume 10554, Light-Emitting Diodes: Materials, Devices, and Applications for Solid State Lighting XXII; 105541N (2018) https://doi.org/10.1117/12.2289984
Event: SPIE OPTO, 2018, San Francisco, California, United States

Abstract

Luminescent epitaxial β-FeSi₂ films were grown on the Ag-layer pre-coated Si(111) substrates by metal-organic chemical vapor deposition method. These epitaxial β-FeSi₂ films had (101)/(110)-preferred orientation and were constructed with a triple-domain structure. The photoluminescence intensity of this (101)/(110)-orientated epitaxial β-FeSi₂ films grown at 700°C was larger than that of β-FeSi₂ films at the other deposition temperature, indicating the decreasing of the density of non-radiative recombination centers in β-FeSi₂ film. The thermal equilibrium Si vacancy is considered to act as the non-radiative recombination centers in β-FeSi₂.

Citation Download Citation

Kensuke Akiyama, Yoshihisa Matsumoto, and Hiroshi Funakubo "Room temperature photoluminescence spectrum from β-FeSi₂ films", Proc. SPIE 10554, Light-Emitting Diodes: Materials, Devices, and Applications for Solid State Lighting XXII, 105541N (14 February 2018); https://doi.org/10.1117/12.2289984

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