EUV-angle resolved scatter (EUV-ARS): a new tool for the characterization of nanometre structures

Analía Fernández Herrero; Heiko Mentzel; Victor Soltwisch; Sina Jaroslawzew; Christian Laubis; Frank Scholze

doi:10.1117/12.2297195

13 March 2018 EUV-angle resolved scatter (EUV-ARS): a new tool for the characterization of nanometre structures

Analía Fernández Herrero, Heiko Mentzel, Victor Soltwisch, Sina Jaroslawzew, Christian Laubis, Frank Scholze

Proceedings Volume 10585, Metrology, Inspection, and Process Control for Microlithography XXXII; 105850P (2018) https://doi.org/10.1117/12.2297195
Event: SPIE Advanced Lithography, 2018, San Jose, California, United States

Abstract

The advance of the semiconductor industry requires new metrology methods, which can deal with smaller and more complex nanostructures. Particularly for inline metrology a rapid, sensitive and non destructive method is needed. Small angle X-ray scattering under grazing incidence has already been investigated for this application and delivers significant statistical information which tracks the profile parameters as well as their variations, i.e. roughness. However, it suffers from the elongated footprint at the sample. The advantage of EUV radiation, with its longer wavelengths, is that larger incidence angles can be used, resulting in a significant reduction of the beam footprint. Targets with field sizes of 100 μm and smaller are accessible with our experimental set-up. We present a new experimental tool for the measurement of small structures based on the capabilities of soft X-ray and EUV scatterometry at the PTB soft X-ray beamline at the electron storage ring BESSY II. PTB’s soft X-ray radiometry beamline uses a plane grating monochromator, which covers the spectral range from 0.7 nm to 25 nm and was especially designed to provide highly collimated radiation. An area detector covers the scattered radiation from a grazing exit angle up to an angle of 30° above the sample horizon and the fluorescence emission can be detected with an energy dispersive X-ray silicon drift detector. In addition, the sample can be rotated and linearly moved in vacuum. This new set-up will be used to explore the capabilities of EUV-scatterometry for the characterization of nanometre-sized structures.

Citation Download Citation

Analía Fernández Herrero, Heiko Mentzel, Victor Soltwisch, Sina Jaroslawzew, Christian Laubis, and Frank Scholze "EUV-angle resolved scatter (EUV-ARS): a new tool for the characterization of nanometre structures", Proc. SPIE 10585, Metrology, Inspection, and Process Control for Microlithography XXXII, 105850P (13 March 2018); https://doi.org/10.1117/12.2297195

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KEYWORDS

Scattering

Diffraction

Diffraction gratings

Sensors

X-rays

Laser scattering

Charge-coupled devices

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