Short Wavelength AlGaInP Laser Diode Research At Sony

T. Mamine; K. Honda; H. Satoh; I. Umezawa; C. Kojima; M. Ikeda; N. Yamamoto; K. Kaneko

doi:10.1117/12.951868

25 July 1989 Short Wavelength AlGaInP Laser Diode Research At Sony

T. Mamine, K. Honda, H. Satoh, I. Umezawa, C. Kojima, M. Ikeda, N. Yamamoto, K. Kaneko

Proceedings Volume 1062, Laser Applications in Meteorology and Earth and Atmospheric Remote Sensing; (1989) https://doi.org/10.1117/12.951868
Event: OE/LASE '89, 1989, Los Angeles, CA, United States

Abstract

Recent research and development work on AlGaInP visible laser diodes by SONY are reviewed. Performance and reliability of a gain-guided 670 nm laser with a tapered geometry are described. Efforts for achieving shorter wavelengths around 650 nm with using (111)B substrates, lower threshold current as well as higher power versions around 10 - 100 mW are also discussed.

Citation Download Citation

T. Mamine, K. Honda, H. Satoh, I. Umezawa, C. Kojima, M. Ikeda, N. Yamamoto, and K. Kaneko "Short Wavelength AlGaInP Laser Diode Research At Sony", Proc. SPIE 1062, Laser Applications in Meteorology and Earth and Atmospheric Remote Sensing, (25 July 1989); https://doi.org/10.1117/12.951868

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