The challenge of sCMOS image sensor technology to EMCCD

Weijing Chang; Fang Dai; Qiyue Na

doi:10.1117/12.2309940

20 February 2018 The challenge of sCMOS image sensor technology to EMCCD

Weijing Chang, Fang Dai, Qiyue Na

Proceedings Volume 10697, Fourth Seminar on Novel Optoelectronic Detection Technology and Application; 1069711 (2018) https://doi.org/10.1117/12.2309940
Event: Fourth Seminar on Novel Optoelectronic Detection Technology and Application, 2017, Nanjing, China

Abstract

In the field of low illumination image sensor, the noise of the latest scientific-grade CMOS image sensor is close to EMCCD, and the industry thinks it has the potential to compete and even replace EMCCD. Therefore we selected several typical sCMOS and EMCCD image sensors and cameras to compare their performance parameters. The results show that the signal-to-noise ratio of sCMOS is close to EMCCD, and the other parameters are superior. But signal-to-noise ratio is very important for low illumination imaging, and the actual imaging results of sCMOS is not ideal. EMCCD is still the first choice in the high-performance application field.

Citation Download Citation

Weijing Chang, Fang Dai, and Qiyue Na "The challenge of sCMOS image sensor technology to EMCCD", Proc. SPIE 10697, Fourth Seminar on Novel Optoelectronic Detection Technology and Application, 1069711 (20 February 2018); https://doi.org/10.1117/12.2309940

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