Presentation + Paper
4 September 2018 Numerical analysis of the indium compositional variation on the efficiency droop of the GaN-based light-emitting diodes
Maaz Islam, Muhammad Usman, Urooj Mushtaq, Nabila Nawaz, Khasan Karimov, Nazeer Muhammad, Kiran Saba
Author Affiliations +
Abstract
We report numerical analysis of the four graded indium compositions and their influence on the optoelectronic performance is reported. We propose a wedge-shaped indium grading with a better optoelectronic performance in comparison to the other three structures. The proposed structure has significantly improved internal quantum efficiency, light output power and radiative recombination.
Conference Presentation
© (2018) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Maaz Islam, Muhammad Usman, Urooj Mushtaq, Nabila Nawaz, Khasan Karimov, Nazeer Muhammad, and Kiran Saba "Numerical analysis of the indium compositional variation on the efficiency droop of the GaN-based light-emitting diodes", Proc. SPIE 10755, Photonic Fiber and Crystal Devices: Advances in Materials and Innovations in Device Applications XII, 107550O (4 September 2018); https://doi.org/10.1117/12.2321287
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CITATIONS
Cited by 8 scholarly publications.
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KEYWORDS
Light emitting diodes

Quantum wells

Indium

Numerical analysis

Optoelectronics

Solid state lighting

Internal quantum efficiency

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