Higher operating temperature photoresponse of MWIR T2SLs InAs/InAsSb photodetector

Krystian Michalczewski; Tsung-Tin Tsai; Piotr Martyniuk; Chao-Sin Wu

doi:10.1117/12.2503766

14 August 2018 Higher operating temperature photoresponse of MWIR T2SLs InAs/InAsSb photodetector

Krystian Michalczewski, Tsung-Tin Tsai, Piotr Martyniuk, Chao-Sin Wu

Proceedings Volume 10830, 13th Conference on Integrated Optics: Sensors, Sensing Structures, and Methods; 1083010 (2018) https://doi.org/10.1117/12.2503766
Event: Thirteenth Integrated Optics: Sensors, Sensing Structures and Methods Conference, 2018, Szcyrk, Poland

Abstract

We investigate the photoresponse of mid-wavelength infrared radiation (MWIR) type-II superlattices (T2SLs) InAs/InAsSb high operating temperature (HOT) photoconductor grown on GaAs substrate. The device consists of a 200 periods of active layer grown on GaSb buffer layer. The photoresistor reached a 50% cut-off wavelength of 5 μm and 6 μm at 200 K and 300 K respectively. The time constant of 30 ns is observed at 200 K under 0.5 V bias. This is the first observation of the photoresponse in MWIR T2SLs InAs/InAsSb photocondotocr above 200 K.

Citation Download Citation

Krystian Michalczewski, Tsung-Tin Tsai, Piotr Martyniuk, and Chao-Sin Wu "Higher operating temperature photoresponse of MWIR T2SLs InAs/InAsSb photodetector", Proc. SPIE 10830, 13th Conference on Integrated Optics: Sensors, Sensing Structures, and Methods, 1083010 (14 August 2018); https://doi.org/10.1117/12.2503766

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