Paper
30 January 1989 New Pattern Transfer Technology For G-line Lithography
M. Sasago, M. Endo, H. Nakagawa, K. Matsuoka, Y. Tani, Y. Hirai, N. Nomura
Author Affiliations +
Abstract
New pattern transfer technology for G-line lithography has been developed. G-line lithography using steppers have become the main tool in the production of submicron design rule VLSI. To adapt G-line lithography for half-micron design rule VLSI production, we have developed new and simple pattern transfer technology. High contrast patterns and resolution were obtained in this technology. This was achieved by using a soak process to treat the resist surface before exposure in the conventional resist process. The surface treatment was done by dipping the wafer in a solution of tetramethyl ammonium hydroxide(TMAH) rather than a chlorobenzene solution. And also, we combined with new pattern transfer technology with CEL (contrast enhanced lithography) to control the aerial image. The resists were imaged by using G-line steppers with NA value of 0.54 and 0.45. The positive photoresists used were S1400(Shipley), TSMR-Vl(Tokyo Ohka) and TSMR-CRB2(Tokyo Ohka dyed resist). A conventional developer for positive photoresist was used for the surface treatment by TMAH alkaline solution. In this process, we have evaluated the baking step either before or after the image exposure in the conventional process in order to compare pattern profiles.
© (1989) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
M. Sasago, M. Endo, H. Nakagawa, K. Matsuoka, Y. Tani, Y. Hirai, and N. Nomura "New Pattern Transfer Technology For G-line Lithography", Proc. SPIE 1086, Advances in Resist Technology and Processing VI, (30 January 1989); https://doi.org/10.1117/12.953042
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Cited by 1 scholarly publication.
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KEYWORDS
Photoresist processing

Lithography

Photography

Scanning electron microscopy

Photoresist materials

Image processing

Silicon

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