Paper
4 March 2019 Highly efficient high-power pumps for QCW fiber lasers
N. Moshegov, I. Berezin, A. Komissarov, P. Trubenko, D. Miftakhutdinov, I. Berishev, V. Chuyanov, N. Strougov, A. Ovtchinnikov, V. Gapontsev
Author Affiliations +
Proceedings Volume 10900, High-Power Diode Laser Technology XVII; 109000G (2019) https://doi.org/10.1117/12.2506537
Event: SPIE LASE, 2019, San Francisco, California, United States
Abstract
We report on new generation high power multimode pumps based on long cavity AlGaInAs/GaAs 9XX-nm chips. These chips are produced in high volume by Solid Source MBE growth on four-inch diameter GaAs wafers. Uniformity of material grown on multi-four-inch wafers is presented. We also demonstrate the uniformity of lasing parameters of ChipOn-Submount (COS) across individual four-inch wafers and across the entire 19”-diameter MBE-platen growth area. We discuss the performance of high power pumps based on simple spatial beam combining. Ultimate ex-fiber (~100 µm core diameter) power launched in CW and QCW modes of operation was recorded in excess of 350 W and 450W, correspondingly. We demonstrate fully wavelength stabilized operation in driving current range in excess of 22A and exfiber power in excess of 135W.
© (2019) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
N. Moshegov, I. Berezin, A. Komissarov, P. Trubenko, D. Miftakhutdinov, I. Berishev, V. Chuyanov, N. Strougov, A. Ovtchinnikov, and V. Gapontsev "Highly efficient high-power pumps for QCW fiber lasers", Proc. SPIE 10900, High-Power Diode Laser Technology XVII, 109000G (4 March 2019); https://doi.org/10.1117/12.2506537
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KEYWORDS
Semiconducting wafers

Manufacturing

Fiber lasers

Luminescence

Semiconductor lasers

Photonics

Quantum wells

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