Beta-Ga2O3: materials synthesis and device demonstration (Conference Presentation)

Hongping Zhao

doi:10.1117/12.2515472

8 March 2019 Beta-Ga2O3: materials synthesis and device demonstration (Conference Presentation)

Hongping Zhao

Proceedings Volume 10919, Oxide-based Materials and Devices X; 109190H (2019) https://doi.org/10.1117/12.2515472
Event: SPIE OPTO, 2019, San Francisco, California, United States

Abstract

Ultrawide bandgap (UWBG) gallium oxide (Ga2O3) represents an emerging semiconductor material with excellent chemical and thermal stability. It has a band gap of 4.5-4.9 eV, much higher than that of the GaN (3.4 eV) and 4H-SiC (3.2 eV). The monoclinic beta-phase Ga2O3 represents the thermodynamically stable crystal among the known five phases . The breakdown field of beta-Ga2O3 is estimated to be 6-8 MV/cm, which is much larger than that of the 4H-SiC and GaN. These unique properties make beta-Ga2O3 a promising candidate for high power electronic device and solar blind photodetector applications. More advantageously, single crystal beta-Ga2O3 substrates can be synthesized by scalable and low cost melting based growth techniques. Different from the molecular beam epitaxy (MBE) and metalorganic chemical vapor deposition (MOCVD) growth techniques, we have developed a low pressure chemical vapor deposition (LPCVD) method to grow high quality beta-Ga2O3 thin films on both native Ga2O3 and c-sapphire substrates with controllable doping and fast growth rates up to 10 um/hr. In this talk, we present the growth, material characterization and device demonstration of beta-Ga2O3 thin films grown via LPCVD. The beta-Ga2O3 thin films were grown on native beta-Ga2O3 (010), (001) and (-201) substrates and sapphire substrates using high purity gallium and oxygen as the precursors, and argon (Ar) as the carrier gas. The growth temperature ranged between 850 ˚C and 950 ˚C. Fundamental material properties including temperature dependent Hall measurements and device demonstration based on vertical Schottky barrier diodes will be discussed.

Conference Presentation

Citation Download Citation

Hongping Zhao "Beta-Ga2O3: materials synthesis and device demonstration (Conference Presentation)", Proc. SPIE 10919, Oxide-based Materials and Devices X, 109190H (8 March 2019); https://doi.org/10.1117/12.2515472

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KEYWORDS

Low pressure chemical vapor deposition

Thin films

Argon

Crystals

Gallium

Gallium nitride

Metalorganic chemical vapor deposition

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