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8 March 2019 Plasmon-induced thermoelectric effect in graphene (Conference Presentation)
Rupert F. Oulton, Viktoryia Shautsova, Themistoklis Sidiropoulos, Nicola G. Black, Adam M. Gilbertson, Stefan A. Maier, Lesley F. Cohen
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Proceedings Volume 10920, 2D Photonic Materials and Devices II; 109200E (2019) https://doi.org/10.1117/12.2511465
Event: SPIE OPTO, 2019, San Francisco, California, United States
Abstract
Graphene has emerged as a promising material for photonics and optoelectronics due to its potential for ultrafast and broad-band photodetection. The photoresponse of graphene junctions is characterized by two competing photocurrent generation mechanisms: a built-in field driven photovoltaic effect and a more dominant hot- carrier-assisted photothermoelectric (PTE) effect. The hot-carrier PTE effect is understood to rely on abrupt variations in the Seebeck coefficient through the graphene doping profile. A second PTE effect can occur across a homogeneous graphene channel in the presence of an electronic temperature gradient. Here, we report on the latter effect facilitated by strongly localised plasmonic heating of graphene carriers in presence of nanostructured electrical contacts resulting in electronic temperatures of the order of 2000 K. At a certain gate bias, the plasmon-induced PTE photocurrent contribution can be isolated. In this regime, the device effectively operates as a sensitive electronic thermometer and as such represents an enabling technology for the development of hot carrier based plasmonic devices.
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Rupert F. Oulton, Viktoryia Shautsova, Themistoklis Sidiropoulos, Nicola G. Black, Adam M. Gilbertson, Stefan A. Maier, and Lesley F. Cohen "Plasmon-induced thermoelectric effect in graphene (Conference Presentation)", Proc. SPIE 10920, 2D Photonic Materials and Devices II, 109200E (8 March 2019); https://doi.org/10.1117/12.2511465
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KEYWORDS
Graphene
Plasmons
Thermoelectric materials
Plasmonics
Doping
Optoelectronics
Photodetectors
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