Growth of InAs quantum dots on unconventional GaAs surfaces using a Bi surfactant (Conference Presentation)

Ryan B. Lewis

doi:10.1117/12.2516803

4 March 2019 Growth of InAs quantum dots on unconventional GaAs surfaces using a Bi surfactant (Conference Presentation)

Ryan B. Lewis

Author Affiliations +

Proceedings Volume 10929, Quantum Dots and Nanostructures: Growth, Characterization, and Modeling XVI; 1092907 (2019) https://doi.org/10.1117/12.2516803
Event: SPIE OPTO, 2019, San Francisco, California, United States

Abstract

While the Stranski–Krastanov (SK) growth of InAs three-dimensional (3D) islands has been extensively investigated on GaAs(001), the SK growth mode is not observed on GaAs (110) and (111), the other low index surfaces of GaAs. This is unfortunate as these surfaces have symmetries (Cs and C3v, respectively) which differ from that of the (001) surface, and owing to their low energy they are often present in self-assembled nanostructures such as nanowires. Here we show that using a Bi surfactant to modify surface properties can profoundly influence epitaxial growth on GaAs (110) and (111)A surfaces. On GaAs(110), the Bi surfactant alters the fundamental growth mode of InAs from 2D layer growth to a 3D SK mode. Furthermore, a morphological phase transition can be induced “on-demand” in static strained 2D InAs(110) layers by exposing them to Bi, resulting in a rapid rearrangement of the InAs layer into 3D islands. Small (110) QDs are coherently strained to the substrate. These islands are optically active and exhibit emission that is linearly polarized, showing perspective for polarized single-photon emitters. On GaAs(111)A, GaAs buffer layer growth under a Bi flux results in ultra-smooth surfaces, which are free from the typically-observed morphological defects. Similar to the (110) case, exposing 2D InAs/GaAs(111)A layers to Bi induces the InAs 3D island self-assembly. These findings illustrate how surface-energy-modifying surfactants open the door to QDs synthesis on new substrates and with new materials.

Conference Presentation

Citation Download Citation

Ryan B. Lewis "Growth of InAs quantum dots on unconventional GaAs surfaces using a Bi surfactant (Conference Presentation)", Proc. SPIE 10929, Quantum Dots and Nanostructures: Growth, Characterization, and Modeling XVI, 1092907 (4 March 2019); https://doi.org/10.1117/12.2516803

ACCESS THE FULL ARTICLE

INSTITUTIONAL
Select your institution to access the SPIE Digital Library.

SELECT YOUR INSTITUTION

PERSONAL
Sign in with your SPIE account to access your personal subscriptions or to use specific features such as save to my library, sign up for alerts, save searches, etc.

PERSONAL SIGN IN

No SPIE Account? Create one

PURCHASE THIS CONTENT

SUBSCRIBE TO DIGITAL LIBRARY

50 downloads per 1-year subscription

Members: $195

Non-members: $335 ADD TO CART

25 downloads per 1 - year subscription

Members: $145

Non-members: $250 ADD TO CART

PURCHASE SINGLE ARTICLE

Includes PDF, HTML & Video, when available

Members: $17.00

Non-members: $21.00 ADD TO CART

PROCEEDINGS
PRESENTATION

WATCH
PRESENTATION SAVE TO MY LIBRARY

GET CITATION

KEYWORDS

Bismuth

Gallium arsenide

Indium arsenide

Quantum dots

Active optics

Cesium

Nanostructures

Show All Keywords

Keywords/Phrases

Search In:

Publication Years