Paper
18 December 2018 Laser system for measuring MEMS relief created by the method of deep reactive ion etching
Tadeáš Maňka, Mojmír Šerý, Stanislav Krátký, Pavel Zemánek
Author Affiliations +
Proceedings Volume 10976, 21st Czech-Polish-Slovak Optical Conference on Wave and Quantum Aspects of Contemporary Optics; 109760M (2018) https://doi.org/10.1117/12.2518098
Event: 21st Czech-Polish-Slovak Optical Conference on Wave and Quantum Aspects of Contemporary Optics, 2018, Lednice, Czech Republic
Abstract
The method of laser interferometry is presented appropriate for precise determination of the depth of etching in a deep reactive ion etching system (DRIE), primarily used for the manufacturing of micro-electro-mechanical systems (MEMS). The system uses previous interferometer designs developed at the Institute of Institute of Scientific Instruments of the CAS, v. v. i. (ISI). We designed and manufactured a measurement system for specific MEMS and its functionality verified with the KLATencor D-120 profilometer.
© (2018) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Tadeáš Maňka, Mojmír Šerý, Stanislav Krátký, and Pavel Zemánek "Laser system for measuring MEMS relief created by the method of deep reactive ion etching", Proc. SPIE 10976, 21st Czech-Polish-Slovak Optical Conference on Wave and Quantum Aspects of Contemporary Optics, 109760M (18 December 2018); https://doi.org/10.1117/12.2518098
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KEYWORDS
Etching

Deep reactive ion etching

Microelectromechanical systems

Silicon

Interferometers

Signal detection

Reactive ion etching

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