Research on responsivity of Si-based p-i-n quadrant photodiode detector interact with millisecond pulsed laser

Hongxu Liu; Guangyong Jin; Di Wang

doi:10.1117/12.2525612

29 March 2019 Research on responsivity of Si-based p-i-n quadrant photodiode detector interact with millisecond pulsed laser

Hongxu Liu, Guangyong Jin, Di Wang

Author Affiliations +

Proceedings Volume 11046, Fifth International Symposium on Laser Interaction with Matter; 1104636 (2019) https://doi.org/10.1117/12.2525612
Event: Fifth International Symposium on Laser Interaction with Matter, 2018, Changsha, China

Abstract

Si-based p-i-n Quadrant Photodiode Detector(QPD) has be1 en widely used in experimental, military and civilian fields for its spot position detection characteristics. In optoelectronic countermeasure technology, there are defects in the detector after Si-based p-i-n Quadrant Photodiode Detector irradiated with laser, and detectivity is affected, nonlinear changes of dark current and responsivity is produced. Responsivity is an important parameter of photodetector. In this paper, the experimental research of responsivity in the process of interaction between millisecond pulsed laser and Si-based p-i-n Quadrant Photodiode Detector is carried out. It is gotten that the relationship between responsivity with laser energy density and laser pulse width in the process of Si-based p-i-n Quadrant Photodiode Detector irradiated by 1064nm millisecond pulse laser. The result of this research establish the foundation to investigate electrical damage of Si-based p-i-n Quadrant Photodiode Detector interacting with millisecond pulsed laser.

Citation Download Citation

Hongxu Liu, Guangyong Jin, and Di Wang "Research on responsivity of Si-based p-i-n quadrant photodiode detector interact with millisecond pulsed laser", Proc. SPIE 11046, Fifth International Symposium on Laser Interaction with Matter, 1104636 (29 March 2019); https://doi.org/10.1117/12.2525612

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