Paper
11 October 1989 Modeling Photovoltaic Infrared Detector Transient Response To Pulsed Gamma Radiation
Paul E. Thurlow
Author Affiliations +
Abstract
Test exposures of cooled photovoltaic diode arrays to short (25 nanosecond) bursts of 1-2 mev gamma radiation have produced characteristic signal decay functions dependent on diode material and geometry. A diode transient response model was desired which: (1) would correlate pv diode measured transient decay behavior with diode design parameters, and; (2) would form a basis for design of pv diode arrays which exhibit desired decay behavior. It appeared at the outset of this study that experimentally measured diode decay functions were probably associated with charge carrier transient production and subsequent diffusion into the p-n junctions. Use of a charge carrier thermal diffusion model therefore appeared appropriate, and later was found to produce voltage decay results which agreed well with test data.
© (1989) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Paul E. Thurlow "Modeling Photovoltaic Infrared Detector Transient Response To Pulsed Gamma Radiation", Proc. SPIE 1107, Infrared Detectors, Focal Plane Arrays, and Imaging Sensors, (11 October 1989); https://doi.org/10.1117/12.960648
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Cited by 1 scholarly publication.
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KEYWORDS
Diffusion

Diodes

Infrared detectors

Photoresistors

Data modeling

Gamma radiation

Staring arrays

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