Laser writing of color centers in silicon carbide

S. Castelletto; T. Katkus; S. Juodkazis

doi:10.1117/12.2540552

31 December 2019 Laser writing of color centers in silicon carbide

S. Castelletto, T. Katkus, S. Juodkazis

Proceedings Volume 11201, SPIE Micro + Nano Materials, Devices, and Applications 2019; 1120112 (2019) https://doi.org/10.1117/12.2540552
Event: ANZCOP, 2019, Melbourne, Australia

Abstract

In this paper, we describe direct laser writing employed in 4H-SiC to create a controlled array or patterns of luminescent emission in the red and near infrared region (from 900nm to 1200nm) under green, red and infrared lasers excitations, respectively. The observed emissions are mainly attributed to vacancies related color centers in 4H-SiC.

Citation Download Citation

S. Castelletto, T. Katkus, and S. Juodkazis "Laser writing of color centers in silicon carbide", Proc. SPIE 11201, SPIE Micro + Nano Materials, Devices, and Applications 2019, 1120112 (31 December 2019); https://doi.org/10.1117/12.2540552

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