Optical And Semiconductor Properties Of Lead Telluride Coatings

Keqi Zhang; John S. Seeley; Roger Hunneman; Gary J. Hawkins

doi:10.1117/12.961354

8 January 1990 Optical And Semiconductor Properties Of Lead Telluride Coatings

Keqi Zhang, John S. Seeley, Roger Hunneman, Gary J. Hawkins

Proceedings Volume 1125, Thin Films in Optics; (1990) https://doi.org/10.1117/12.961354
Event: 1989 International Congress on Optical Science and Engineering, 1989, Paris, France

Abstract

The optical and semiconductor properties of lead telluride coatings are dependent on various factors contributing to its performance. In this paper, we will present the temperature dependent effects of single layer lead telluride coatings on the dispersion and absorption characteristics, absorption edge, and carrier concentration from 15 K to 436 K using both experimental and theoretical analysis.

Citation Download Citation

Keqi Zhang, John S. Seeley, Roger Hunneman, and Gary J. Hawkins "Optical And Semiconductor Properties Of Lead Telluride Coatings", Proc. SPIE 1125, Thin Films in Optics, (8 January 1990); https://doi.org/10.1117/12.961354

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