Reaching high average powers and room temperature operation for THz sources has become the key challenge for the uptake of THz applications that require real-time imaging. In this work, we show that by placing a photoconductive switch within a quasi-resonant cavity based on a metal-insulator-metal geometry, we are able to generate, at room temperature, average THz powers greater than of 200 µW, with the frequency of the THz emission centred at 1.5THz, specifications ideally adapted to NDT. We demonstrate proof-of-principle real-time THz imaging.
|