Room-temperature CW operation of GaSb laser diodes grown on on-axis (001) Si substrates (Conference Presentation)

Marta Rio Calvo; Jean Baptiste Rodriguez; Laurent Cerutti; Laura Monge Bartolome; Michael Bahriz; Eric Tournié

doi:10.1117/12.2542781

9 March 2020 Room-temperature CW operation of GaSb laser diodes grown on on-axis (001) Si substrates (Conference Presentation)

Marta Rio Calvo, Jean Baptiste Rodriguez, Laurent Cerutti, Laura Monge Bartolome, Michael Bahriz, Eric Tournié

Author Affiliations +

Proceedings Volume 11301, Novel In-Plane Semiconductor Lasers XIX; 113010J (2020) https://doi.org/10.1117/12.2542781
Event: SPIE OPTO, 2020, San Francisco, California, United States

Abstract

The monolithic integration of III-V semiconductors on on-axis silicon is currently under active consideration. In this work we propose a novel epitaxial procedure to grow high quality, anti-phase boundary free GaSb layers on on-axis Si. Broad-area laser diodes based on AlGaAsSb/GaInAsSb QWs exhibit threshold current densities lower than 1 kA.cm-2 whereas narrow-ridge lasers operate cw above room temperature. Our results open the way to the epitaxial integration of a variety of IR lasers on on-axis Si.

Conference Presentation

Citation Download Citation

Marta Rio Calvo, Jean Baptiste Rodriguez, Laurent Cerutti, Laura Monge Bartolome, Michael Bahriz, and Eric Tournié "Room-temperature CW operation of GaSb laser diodes grown on on-axis (001) Si substrates (Conference Presentation)", Proc. SPIE 11301, Novel In-Plane Semiconductor Lasers XIX, 113010J (9 March 2020); https://doi.org/10.1117/12.2542781

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