Paper
11 December 2019 ArF*, KrF*, and FI lasers pumped by double discharge from generator with semiconductor opening switch
Author Affiliations +
Proceedings Volume 11322, XIV International Conference on Pulsed Lasers and Laser Applications; 113222S (2019) https://doi.org/10.1117/12.2548394
Event: XIV International Conference on Pulsed Lasers and Laser Applications (AMPL-2019), 2019, Tomsk, Russian Federation
Abstract
Discharge and laser parameters in high-pressure gas mixtures of rare gases with F2 under pumping by generators with inductive energy storage (IES) and semiconductor opening switch (SOS) are studied. It was shown that the pre-pulse with high pumping power formed by IES produces high-density discharge plasma and inversion population in gas mixtures under study within ∼10 ns and provides both early one-set of lasing and conditions for efficient excitation of an active medium from the storage capacitor. The high-voltage pre-pulse from the IES and sharp increase of discharge current allows to form long-lived stable volume discharge. Improve of pulse duration and (or) output energy was achieved for atomic fluorine, ArF* and KrF* excimer lasers.
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Alexei N. Panchenko and Victor F. Tarasenko "ArF*, KrF*, and FI lasers pumped by double discharge from generator with semiconductor opening switch", Proc. SPIE 11322, XIV International Conference on Pulsed Lasers and Laser Applications, 113222S (11 December 2019); https://doi.org/10.1117/12.2548394
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KEYWORDS
Pulsed laser operation

Fluorine

Diodes

Semiconductor lasers

Switches

Capacitors

Molecules

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