Multilayers For X- In Optics

J. P. Chauvineau

doi:10.1117/12.961861

27 November 1989 Multilayers For X- In Optics

J. P. Chauvineau

Proceedings Volume 1140, X-Ray Instrumentation in Medicine and Biology, Plasma Physics, Astrophysics, and Synchrotron Radiation; (1989) https://doi.org/10.1117/12.961861
Event: 1989 International Congress on Optical Science and Engineering, 1989, Paris, France

Abstract

The design and preparation of multilayers for X-UV Schwarzschild microscopes for laser created plasmas imaging is described. WRe/Si, Mo/Si, and Rh/C multilayers have been made for imaging at 30.4 nm, 15.5 nm, and 11.4 rim respectively. In order to evaluate the transmission of the optical system, the lateral thickness variation of the multilayers is calculated from the geometrical characteristics of the deposition system. The interface roughness, deduced from the value of the relectivity as a function of thickness measured during the multilayer deposition, is taken into account for the calculation of the multilayer reflectivity.

Citation Download Citation

J. P. Chauvineau "Multilayers For X- In Optics", Proc. SPIE 1140, X-Ray Instrumentation in Medicine and Biology, Plasma Physics, Astrophysics, and Synchrotron Radiation, (27 November 1989); https://doi.org/10.1117/12.961861

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