Paper
28 November 1989 An InP-InGaAs Light Amplifying Optical Switch
S. A. Feld, C. W. Wilmsen, M. Hafich, J. Quigley, G. Y. Robinson
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Proceedings Volume 1144, 1st Intl Conf on Indium Phosphide and Related Materials for Advanced Electronic and Optical Devices; (1989) https://doi.org/10.1117/12.962025
Event: First International Conference on Indium Phosphide and Related Material for Advanced Electronic and Optical Devices, 1989, Norman, OK, United States
Abstract
Optical devices which perform logic functions and that can be cascaded, require optical gain. This mandates that the device contain an active element. We have designed such a device which we call a light amplifying optical swtich (LAOS). The gain is obtained from an NPN heterojunction bipolar phototransistor which is in series with a light emitting diode or laser. The first LAOS structure has been fabricated from lattice matched InGaAs on InP using gas source molecular beam epitaxy. A strained layer optical electrical absorber is sandwiched between the light emitter and the detector in order to reduce positive feedback and prevent latching. Analysis indicates that electrical gains of 3000 and optical gains as high as 100 can be obtained.
© (1989) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
S. A. Feld, C. W. Wilmsen, M. Hafich, J. Quigley, and G. Y. Robinson "An InP-InGaAs Light Amplifying Optical Switch", Proc. SPIE 1144, 1st Intl Conf on Indium Phosphide and Related Materials for Advanced Electronic and Optical Devices, (28 November 1989); https://doi.org/10.1117/12.962025
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