Annealing Conditions For Fe Doped Semi-Insulating InP

K. Kainosho; H. Shimakura; H. Yamamoto; T. Inoue; O. Oda

doi:10.1117/12.962016

28 November 1989 Annealing Conditions for Fe Doped Semi-Insulating InP

K. Kainosho, H. Shimakura, H. Yamamoto, T. Inoue, O. Oda

Proceedings Volume 1144, 1st Intl Conf on Indium Phosphide and Related Materials for Advanced Electronic and Optical Devices; (1989) https://doi.org/10.1117/12.962016
Event: First International Conference on Indium Phosphide and Related Material for Advanced Electronic and Optical Devices, 1989, Norman, OK, United States

Abstract

Fe doped semi-insulating InP single crystals have been grown by using highly purified InP materials. The uniformity of resistivity over the wafer was evaluated by using the three-electrode guard method with the electrode pitch of 100 μm. The uniformity of resistivity was largely improved by the recent crystal preparation. SiNx cap annealing after Si ion implantation has been performed by using these highly uniform wafers with the Fe concentration ranging from 8x10¹⁵ to 5x10¹⁶ cm^-3. It was found that the uniformity is degraded when the wafer is annealed at 700°C while the uniformity is kept constant when the wafer is annealed at below 700°C. The activation efficiency was found to be maximum when the wafer is annealed at 620°C. Photoluminescence measurement clarified that wafers annealed at above 720°C show abnormal spectra at the longer wavelength region(880-980 nm).

Citation Download Citation

K. Kainosho, H. Shimakura, H. Yamamoto, T. Inoue, and O. Oda "Annealing Conditions for Fe Doped Semi-Insulating InP", Proc. SPIE 1144, 1st Intl Conf on Indium Phosphide and Related Materials for Advanced Electronic and Optical Devices, (28 November 1989); https://doi.org/10.1117/12.962016

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