Flow-Rate Modulation Epitaxy Of InP By Metalorganic Chemical Vapor Deposition

W. K. Chen; J. C. Chen; J. F. Chen; C. R. Wie; P. L. Liu; D. M. Hwang

doi:10.1117/12.961990

28 November 1989 Flow-Rate Modulation Epitaxy Of InP By Metalorganic Chemical Vapor Deposition

W. K. Chen, J. C. Chen, J. F. Chen, C. R. Wie, P. L. Liu, D. M. Hwang

Proceedings Volume 1144, 1st Intl Conf on Indium Phosphide and Related Materials for Advanced Electronic and Optical Devices; (1989) https://doi.org/10.1117/12.961990
Event: First International Conference on Indium Phosphide and Related Material for Advanced Electronic and Optical Devices, 1989, Norman, OK, United States

Abstract

We have used the flow-rate modulation epitaxy technique to grow InP in a modified atomospheric-pressure metalorganic chemical vapor deposition system. We demonstrate the deposition of a monolayer in each growth cycle. The growth is mass-transport-limited at higher substrate temperatures, i.e., 420 to 580°C, and is kinetic-limited with an activation energy of 0.57 eV for lower temperatures. The surface morphology is specular even for InP layers grown as low as 330°C.

Citation Download Citation

W. K. Chen, J. C. Chen, J. F. Chen, C. R. Wie, P. L. Liu, and D. M. Hwang "Flow-Rate Modulation Epitaxy Of InP By Metalorganic Chemical Vapor Deposition", Proc. SPIE 1144, 1st Intl Conf on Indium Phosphide and Related Materials for Advanced Electronic and Optical Devices, (28 November 1989); https://doi.org/10.1117/12.961990

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