GaInAs Misfet Wideband Microwave Power Amplifiers

D. Bechtle; L. C. Upadhyayula; P. D. Gardner; S. Y. Narayan

doi:10.1117/12.962041

28 November 1989 GaInAs MISFET Wideband Microwave Power Amplifiers

D. Bechtle, L. C. Upadhyayula, P. D. Gardner, S. Y. Narayan

Proceedings Volume 1144, 1st Intl Conf on Indium Phosphide and Related Materials for Advanced Electronic and Optical Devices; (1989) https://doi.org/10.1117/12.962041
Event: First International Conference on Indium Phosphide and Related Material for Advanced Electronic and Optical Devices, 1989, Norman, OK, United States

Abstract

We present the first reported results on wideband GaInAs MISFET amplifiers. Using 1-μm-gatelength, 0.56-mm-gatewidth GaInAs MISFETs, we obtained: (a) a power output of 230±30mW (0.41 W/mm) with 33±3% power-added efficiency; (b) power output of 265±15 mW (0.47 W/mm) with 30±3% power-added efficiency, both over the 7- to 11- GHz band, and (c) a power output of 220 ±45 mW (0.39 W/mm) with 29 ±4% power-added efficiency over the 6- to 12-GHz band. With a 0.7-μm-gatelength GaInAs MISFET, a small-signal gain of 5±0.5 dB over the 11.4- to 22.6-GHz band was obtained. These data include all connector, bias network, and circuit losses. We also present an equivalent circuit model of 1-μm-gatelength GaInAs MISFETs based on S-parameter measurements. The model is essentially that for a MESFET with capacitors representing gate-to-source and gate-to-drain overlap capacitances added at input and output.

Citation Download Citation

D. Bechtle, L. C. Upadhyayula, P. D. Gardner, and S. Y. Narayan "GaInAs MISFET Wideband Microwave Power Amplifiers", Proc. SPIE 1144, 1st Intl Conf on Indium Phosphide and Related Materials for Advanced Electronic and Optical Devices, (28 November 1989); https://doi.org/10.1117/12.962041

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