Technology And Drift Characteristics Of UVCVD-SiO2 / InP MISFET Devices

P. Dimitriou; A. Falcou; P. Krauz; G. Post; A. Scavennec

doi:10.1117/12.962014

28 November 1989 Technology And Drift Characteristics Of UVCVD-SiO₂/InP MISFET Devices

P. Dimitriou, A. Falcou, P. Krauz, G. Post, A. Scavennec

Proceedings Volume 1144, 1st Intl Conf on Indium Phosphide and Related Materials for Advanced Electronic and Optical Devices; (1989) https://doi.org/10.1117/12.962014
Event: First International Conference on Indium Phosphide and Related Material for Advanced Electronic and Optical Devices, 1989, Norman, OK, United States

Abstract

Ion implanted planar MISFET's on semi-insulating indium phosphide substrate were studied. In-situ treatment with ammonia and UV activated CVD of silicon dioxide provided for threshold voltage drift below 0.5 V on depletion-mode transistors. Inverters from enhancement/depletion transistor pairs and 19-stage ring oscillators were made.

Citation Download Citation

P. Dimitriou, A. Falcou, P. Krauz, G. Post, and A. Scavennec "Technology And Drift Characteristics Of UVCVD-SiO₂/InP MISFET Devices", Proc. SPIE 1144, 1st Intl Conf on Indium Phosphide and Related Materials for Advanced Electronic and Optical Devices, (28 November 1989); https://doi.org/10.1117/12.962014

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