The Passivation Of InP By In (PO3)3 Condensed Phosphates For MISFET Applications

J. Joseph; Y. Robach; G. Hollinger; P. Ferret; M. Pitaval

doi:10.1117/12.962010

28 November 1989 The Passivation Of InP by In (PO₃)₃ Condensed Phosphates for MISFET Applications

J. Joseph, Y. Robach, G. Hollinger, P. Ferret, M. Pitaval

Proceedings Volume 1144, 1st Intl Conf on Indium Phosphide and Related Materials for Advanced Electronic and Optical Devices; (1989) https://doi.org/10.1117/12.962010
Event: First International Conference on Indium Phosphide and Related Material for Advanced Electronic and Optical Devices, 1989, Norman, OK, United States

Abstract

Very recently high quality MISFET devices have been fabricated using native In(PO3)3-like condensed phosphates. It is believed that the high performance obtained is related to the particular physicochemical and structural properties of these phosphates. They exhibit good intrinsic dielectric properties (resistivity : 10 13 Ω.cm, bandgap ~6.8 eV). A high degree of structural flexibility favors crystallo-chemical matching between the semiconductor and the oxide. Growth of these native oxides leads to a buried interface with a relatively smooth oxide/semiconductor interface (roughness of about 20 Å).

Citation Download Citation

J. Joseph, Y. Robach, G. Hollinger, P. Ferret, and M. Pitaval "The Passivation Of InP by In (PO₃)₃ Condensed Phosphates for MISFET Applications", Proc. SPIE 1144, 1st Intl Conf on Indium Phosphide and Related Materials for Advanced Electronic and Optical Devices, (28 November 1989); https://doi.org/10.1117/12.962010

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