Poster + Paper
13 December 2020 Characterization of low-loss hydrogenated amorphous silicon films for superconducting resonators
Author Affiliations +
Conference Poster
Abstract
Superconducting resonators used in millimeter-submillimeter astronomy would greatly benefit from deposited dielectrics with a small dielectric loss. We deposited hydrogenated amorphous silicon films using plasma-enhanced chemical vapor deposition, at substrate temperatures of 100°C, 250°C and 350°C. The measured void volume fraction, hydrogen content, microstructure parameter, and bond-angle disorder are negatively correlated with the substrate temperature. All three films have a loss tangent below 10−5 for a resonator energy of 105 photons, at 120 mK and 4–7 GHz. This makes these films promising for microwave kinetic inductance detectors and on-chip millimeter-submilimeter filters.
© (2020) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
B. T. Buijtendorp, J. Bueno, D. J. Thoen, V. Murugesan, P. M. Sberna, J. J. A. Baselmans, S. Vollebregt, and A. Endo "Characterization of low-loss hydrogenated amorphous silicon films for superconducting resonators", Proc. SPIE 11453, Millimeter, Submillimeter, and Far-Infrared Detectors and Instrumentation for Astronomy X, 114532X (13 December 2020); https://doi.org/10.1117/12.2562233
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CITATIONS
Cited by 2 scholarly publications.
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KEYWORDS
Dielectrics

Resonators

Superconductors

Astronomy

Microwave radiation

Inductance

Sensors

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