GaN vacuum nanoelectronic devices

George T. Wang; Keshab R. Sapkota; Barbara A. Kazanowska; A. Alec Talin; Francois Leonard; Brendan P. Gunning; Kevin S. Jones

doi:10.1117/12.2570577

21 August 2020 GaN vacuum nanoelectronic devices

George T. Wang, Keshab R. Sapkota, Barbara A. Kazanowska, A. Alec Talin, Francois Leonard, Brendan P. Gunning, Kevin S. Jones

Author Affiliations +

Proceedings Volume 11465, Low-Dimensional Materials and Devices 2020; 114650O (2020) https://doi.org/10.1117/12.2570577
Event: SPIE Nanoscience + Engineering, 2020, Online Only

Abstract

Solid-state, vacuum nanoelectronic devices have the potential to combine the advantages of vacuum electron devices, such as robustness in harsh environments and high frequency operation, and solid-state devices, such as size, integrability, and low-power operation. In this work, we demonstrate novel GaN nanogap field emission diodes that operate in air and exhibit low turn-on voltage, high field emission current, and excellent on-off ratio. We present experimental and modeling results on the field emission characteristics of these devices at various nanogap sizes and operating pressures. These results provide critical new insights into the behavior of this new class of devices and point to future challenges and opportunities. Sandia National Laboratories is managed and operated by NTESS under DOE NNSA contract DE-NA0003525.

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Citation Download Citation

George T. Wang, Keshab R. Sapkota, Barbara A. Kazanowska, A. Alec Talin, Francois Leonard, Brendan P. Gunning, and Kevin S. Jones "GaN vacuum nanoelectronic devices", Proc. SPIE 11465, Low-Dimensional Materials and Devices 2020, 114650O (21 August 2020); https://doi.org/10.1117/12.2570577

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