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20 August 2020 Enhancement of internal quantum efficiency of green GaN-based light-emitting diodes by employing graded well/barrier/electron blocking layer
Abdur-Rehman Anwar, Muhammad Usman, Munaza Munsif, Aleem Ahmed Khan
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Proceedings Volume 11498, Photonic Fiber and Crystal Devices: Advances in Materials and Innovations in Device Applications XIV; 1149806 (2020) https://doi.org/10.1117/12.2568457
Event: SPIE Optical Engineering + Applications, 2020, Online Only
Abstract
We have numerically investigated single quantum well (SQW) green InGaN-based light-emitting diode (LED) by simultaneously grading quantum well (QW), quantum barriers (QBs) and electron blocking layer (EBL). We compared the simulated results and found that our proposed structure has shown significant improvement in the hole injection. In addition, reduction of strong built-in electrostatic field in the proposed structure has improved the light output power by twice, reduced the efficiency droop by ~23% and improved the radiative recombination by ~46% in the proposed structure.
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Abdur-Rehman Anwar, Muhammad Usman, Munaza Munsif, and Aleem Ahmed Khan "Enhancement of internal quantum efficiency of green GaN-based light-emitting diodes by employing graded well/barrier/electron blocking layer", Proc. SPIE 11498, Photonic Fiber and Crystal Devices: Advances in Materials and Innovations in Device Applications XIV, 1149806 (20 August 2020); https://doi.org/10.1117/12.2568457
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KEYWORDS
Quantum wells
Light emitting diodes
Indium gallium nitride
Internal quantum efficiency
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