Plasmonic FET terahertz spectrometer using Si MOS, InGaAs and GaN HEMTs and p-diamond FETs

Xueqing Liu; Trond Ytterdal; Michael S. Shur

doi:10.1117/12.2568283

20 August 2020 Plasmonic FET terahertz spectrometer using Si MOS, InGaAs and GaN HEMTs and p-diamond FETs

Xueqing Liu, Trond Ytterdal, Michael S. Shur

Proceedings Volume 11499, Terahertz Emitters, Receivers, and Applications XI; 114990M (2020) https://doi.org/10.1117/12.2568283
Event: SPIE Optical Engineering + Applications, 2020, Online Only

Abstract

THz spectrometers in the frequency range from 120 GHz to 9.3 THz could be implemented using single Si MOSFETs, AlGaN/GaN HEMTs, AlGaAs/InGaAs HEMTs, and p-diamond FETs. The spectrometer detects the rectified voltage between the source and drain that is proportional to the sine of the phase shift between the voltages induced by the THz signal between gate-to-drain and gate-to-source terminals. This phase difference could be created by using different antennas for the source-to-gate and drain-to gate contacts or by using a delay line introducing a phase shift. The FET with the gate lengths from 20 nm to 130 nm could operate at room temperature as with different frequency ranges requiring different features sizes. The spectrometers are simulated using the multi segment unified charge control model implemented in SPICE and ADS.

Conference Presentation

Citation Download Citation

Xueqing Liu, Trond Ytterdal, and Michael S. Shur "Plasmonic FET terahertz spectrometer using Si MOS, InGaAs and GaN HEMTs and p-diamond FETs", Proc. SPIE 11499, Terahertz Emitters, Receivers, and Applications XI, 114990M (20 August 2020); https://doi.org/10.1117/12.2568283

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