3.6 µm Quantum Cascade Laser based on low-interface-scattering active region design

Mykhaylo P. Semtsiv; William Ted Masselink

doi:10.1117/12.2582114

20 September 2020 3.6 μm Quantum Cascade Laser based on low-interface-scattering active region design

Mykhaylo P. Semtsiv, William Ted Masselink

Proceedings Volume 11539, Technologies for Optical Countermeasures XVII; and High-Power Lasers: Technology and Systems, Platforms, Effects IV; 1153904 (2020) https://doi.org/10.1117/12.2582114
Event: SPIE Security + Defence, 2020, Online Only

Abstract

We discuss a solution to the dilemma of high confinement energy and the high interface-scattering rate for the high-barrier InGaAs-InAlAs-AlAs QCLs, operating at wavelengths substantially shorter than 4 µm. The new design includes fewer quantum wells within a single cascade and operates at 3.6 µm. Otherwise, its performance is very similar to the best of recently-shown QCLs at 4.6 µm and 4.0 µm using the same material system.

Conference Presentation

Citation Download Citation

Mykhaylo P. Semtsiv and William Ted Masselink "3.6 μm Quantum Cascade Laser based on low-interface-scattering active region design", Proc. SPIE 11539, Technologies for Optical Countermeasures XVII; and High-Power Lasers: Technology and Systems, Platforms, Effects IV, 1153904 (20 September 2020); https://doi.org/10.1117/12.2582114

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