Poster + Paper
10 October 2020 Enhanced output power of InGaN/GaN light-emitting diodes with a multilayered structure of AlGaN/GaN electron blocking layer
You Li, Jun Wang, Yang Hu, Guo Zhang, Wenqiang Chen
Author Affiliations +
Conference Poster
Abstract
GaN-based multiple quantum well (MQW) light emitting diodes (LEDs) are promising to replace the conventional incandescent and fluorescent lamps due to recent improvements in material quality and device .Blue InGaN/GaN multiple quantum well light-emitting diodes with the conventional AlGaN and AlGaN-GaN-AlGaN (AGA) and many other novel structure electron blocking layer(EBL) are numerically investigated. When either AlGaN layer of a AGA EBL is inserted by a GaN layer leading to a multilayered structure, the simulation results show the Fermi level and energy gap of the EBL make a remarkable difference owing to the changed structure and the device with the new structure creates much higher output power as compared to those with conventional structure and AGA structure due to the enhancement of the electron confinement and improvement of the hole
© (2020) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
You Li, Jun Wang, Yang Hu, Guo Zhang, and Wenqiang Chen "Enhanced output power of InGaN/GaN light-emitting diodes with a multilayered structure of AlGaN/GaN electron blocking layer", Proc. SPIE 11547, Optoelectronic Devices and Integration IX, 115471J (10 October 2020); https://doi.org/10.1117/12.2574876
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KEYWORDS
Electron beam lithography

Light emitting diodes

Multilayers

Gallium nitride

Quantum wells

Computer simulations

Diodes

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