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22 February 2021 Review of scanning electron microscope-based overlay measurement
Osamu Inoue
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Proceedings Volume 11611, Metrology, Inspection, and Process Control for Semiconductor Manufacturing XXXV; 116110A (2021) https://doi.org/10.1117/12.2585880
Event: SPIE Advanced Lithography, 2021, Online Only
Abstract
Overlay control has been one of the most critical issues for manufacturing of leading edge semiconductor devices. Scanning electron microscope-based overlay (SEM-OL) metrology can directly measure both overlay targets and actual devices or device-like structures with high spatial resolution. SEM-OL uses small structures which allows insertion of many SEM-OL targets across a die. Precise overlay distribution can be measured using dedicated SEM-OL mark, improving measurement accuracy and repeatability. To extend SEM-OL capability, we have been developing SEM-OL techniques that can measure not only surface patterns by critical dimension SEM but also buried patterns for leading edge device processes.
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Osamu Inoue "Review of scanning electron microscope-based overlay measurement", Proc. SPIE 11611, Metrology, Inspection, and Process Control for Semiconductor Manufacturing XXXV, 116110A (22 February 2021); https://doi.org/10.1117/12.2585880
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KEYWORDS
Overlay metrology
Scanning electron microscopy
Metrology
Algorithm development
Inspection
Manufacturing
Optics manufacturing
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