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5 March 2021 HVPE growth of orientation patterned GaAsP for nonlinear frequency applications
Shivashankar Vangala, Vladimir Tassev, Meagan Parker, Duane Brinegar
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Proceedings Volume 11670, Nonlinear Frequency Generation and Conversion: Materials and Devices XX; 116700N (2021) https://doi.org/10.1117/12.2578635
Event: SPIE LASE, 2021, Online Only
Abstract
We present GaAsxP1-x as an attractive ternary material that combines the properties of GaAs and GaP for nonlinear optical applications as it combines the higher nonlinear susceptibility of GaAs with the lower 2PA of GaP for a given x-composition. We discuss the HVPE growth results of GaAsP on plain substrates and on orientation patterned (OP) templates fabricated by the conventional MBE assisted polarity inversion technique with and without the MBE regrowth step. Along with the growth results showing in excess of 500 µm thick growth, we also present the structural and optical properties of the ternary material.
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Shivashankar Vangala, Vladimir Tassev, Meagan Parker, and Duane Brinegar "HVPE growth of orientation patterned GaAsP for nonlinear frequency applications", Proc. SPIE 11670, Nonlinear Frequency Generation and Conversion: Materials and Devices XX, 116700N (5 March 2021); https://doi.org/10.1117/12.2578635
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KEYWORDS
Binary data
Gallium arsenide
Nonlinear frequency conversion
Nonlinear optics
Frequency conversion
Laser sources
Long wavelength infrared
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