Presentation
5 March 2021 Novel photoconductive antennas based on rhodium doped InGaAs with 637 μW emitted THz power
Robert B. Kohlhaas, Steffen Breuer, Lars Liebermeister, Simon Nellen, Milan Deumer, Martin Schell, Björn Globisch
Author Affiliations +
Abstract
We present novel photoconductive antennas (PCAs) compatible with 1550 nm excitation for terahertz (THz) time-domain spectroscopy (TDS). Rhodium (Rh) doped InGaAs grown by molecular beam epitaxy is used as the underlying photoconductor. Due to the advantageous combination of sub-picosecond carrier lifetime and excellent electronic properties, InGaAs:Rh based emitters feature an unprecedented emitted THz power of 637 µW. A record peak dynamic range of 110 dB is demonstrated with a THz TDS system using InGaAs:Rh based PCAs only. This sets a new benchmark for THz TDS systems operating at 1550 nm.
Conference Presentation
© (2021) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Robert B. Kohlhaas, Steffen Breuer, Lars Liebermeister, Simon Nellen, Milan Deumer, Martin Schell, and Björn Globisch "Novel photoconductive antennas based on rhodium doped InGaAs with 637 μW emitted THz power", Proc. SPIE 11685, Terahertz, RF, Millimeter, and Submillimeter-Wave Technology and Applications XIV, 116851K (5 March 2021); https://doi.org/10.1117/12.2582964
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